The Library
Effect of HCl cleaning on InSb–Al2O3 MOS capacitors
Tools
Tools
Tools
Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim (2019) Effect of HCl cleaning on InSb–Al2O3 MOS capacitors. Semiconductor Science and Technology, 34 (3). 035032. doi:10.1088/1361-6641/ab0331
|
PDF
WRAP-effect-HCl-cleaning-Vavasour-2019.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution. Download (767Kb) | Preview |
|
![[img]](http://wrap.warwick.ac.uk/style/images/fileicons/application_pdf.png) |
PDF
engineering-060319-wrap--hclcleaning_v9.pdf - Accepted Version Embargoed item. Restricted access to Repository staff only - Requires a PDF viewer. Download (563Kb) |
Official URL: http://dx.doi.org/10.1088/1361-6641/ab0331
Abstract
In this work, the role of HCl treatments on InSb surfaces and InSb–Al2O3 dielectric interfaces is characterised. X-ray photoelectron spectroscopy measurements indicate that HCl diluted in and rinsed with isopropanol (IPA) results in a surface layer of InCl3 which is not present for similar HCl-water processes. Furthermore, this InCl3 layer desorbs from the surface between 200 °C and 250 °C. Metal–oxide–semiconductor capacitors were fabricated using atomic layer deposition of Al2O3 at 200 °C and 250 °C and the presence of InCl3 was associated with a +0.79 V flatband voltage shift. The desorption of the InCl3 layer at 250 °C reversed this shift but the increased process temperature resulted in increased interface-trapped charge (D it) and hysteresis voltage (V H ). This shift in flatband voltage, which does not affect other figures of merit, offers a promising route to manipulate the threshold voltage of MOS transistors, allowing enhancement-mode and depletion-mode devices to be fabricated in parallel.
| Item Type: | Journal Article | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
||||||||
| Divisions: | Faculty of Science > Engineering | ||||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductors, Capacitors | ||||||||
| Journal or Publication Title: | Semiconductor Science and Technology | ||||||||
| Publisher: | Institute of Physics Publishing Ltd. | ||||||||
| ISSN: | 0268-1242 | ||||||||
| Official Date: | 26 February 2019 | ||||||||
| Dates: |
|
||||||||
| Date of first compliant deposit: | 6 March 2019 | ||||||||
| Volume: | 34 | ||||||||
| Number: | 3 | ||||||||
| Article Number: | 035032 | ||||||||
| DOI: | 10.1088/1361-6641/ab0331 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| RIOXX Funder/Project Grant: |
|
||||||||
| Related URLs: |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
