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Data for Effect of HCl cleaning on InSb–Al2O3 MOS capacitors
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Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim (2019) Data for Effect of HCl cleaning on InSb–Al2O3 MOS capacitors. [Dataset]
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114894 Data for WRAP.zip - Published Version Available under License Creative Commons Attribution 4.0. Download (24Mb) |
Official URL: http://wrap.warwick.ac.uk/114894
Abstract
In this work, the role of HCl treatments on InSb surfaces and InSb–Al2O3 dielectric interfaces is characterised. X-ray photoelectron spectroscopy measurements indicate that HCl diluted in and rinsed with isopropanol (IPA) results in a surface layer of InCl3 which is not present for similar HCl-water processes. Furthermore, this InCl3 layer desorbs from the surface between 200 °C and 250 °C. Metal–oxide–semiconductor capacitors were fabricated using atomic layer deposition of Al2O3 at 200 °C and 250 °C and the presence of InCl3 was associated with a +0.79 V flatband voltage shift. The desorption of the InCl3 layer at 250 °C reversed this shift but the increased process temperature resulted in increased interface-trapped charge (D it) and hysteresis voltage (V H ). This shift in flatband voltage, which does not affect other figures of merit, offers a promising route to manipulate the threshold voltage of MOS transistors, allowing enhancement-mode and depletion-mode devices to be fabricated in parallel.
| Item Type: | Dataset | ||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
| Type of Data: | Tabular | ||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductors, Capacitors | ||||||
| Publisher: | University of Warwick, School of Engineering | ||||||
| Official Date: | 14 March 2019 | ||||||
| Dates: |
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| Status: | Not Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Media of Output (format): | File, .xlsx .txt | ||||||
| Access rights to Published version: | Open Access (Creative Commons) | ||||||
| Copyright Holders: | Any further enquiries regarding this dataset should be directed to o.vavasour@warwick.ac.uk | ||||||
| Description: | The XPS data includes VAMAS files that contain the measured XPS data and modelled (fitted) components - one file for the samples treated in the HCl-water solution and a separate file for the sample treated in the HCl-IPA solution. In each file, the spectra taken after the subsequent annealing steps are included within the same VAMAS files. The XPS data folder also includes a Microsoft Excel spreadsheet, summarising the changes in the HCl-IPA sample after annealing. The electrical characterisation includes the raw measurement data and two Microsoft Excel files - one containing the data extracted from the raw capacitance-voltage data and one summarising the sample yield. The raw data includes, for each device, capacitance-voltage data, corresponding conductance-voltage data and two additional capacitance-voltage and conductance-voltage data files with reverse-direction voltage sweeps appended (where performed). For the control sample, some current-voltage data is also included. |
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| Date of first compliant deposit: | 12 March 2019 | ||||||
| Date of first compliant Open Access: | 12 March 2019 | ||||||
| RIOXX Funder/Project Grant: |
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