Diffusion of ion-implanted boron in germanium
UNSPECIFIED (2001) Diffusion of ion-implanted boron in germanium. JOURNAL OF APPLIED PHYSICS, 90 (8). pp. 4293-4295. ISSN 0021-8979Full text not available from this repository.
The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation, and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(+/-0.3)x 10(-16) cm(2)/s and 5.5(+/-1.0) x 10(18)/cm(3), respectively, at 850 degreesC by fitting experimentally obtained profiles. This value of diffusion coefficient is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge. (C) 2001 American Institute of Physics.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF APPLIED PHYSICS|
|Publisher:||AMER INST PHYSICS|
|Date:||15 October 2001|
|Number of Pages:||3|
|Page Range:||pp. 4293-4295|
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