UNSPECIFIED (2001) Diffusion of ion-implanted boron in germanium. JOURNAL OF APPLIED PHYSICS, 90 (8). pp. 4293-4295. ISSN 0021-8979

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Abstract

The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation, and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(+/-0.3)x 10(-16) cm(2)/s and 5.5(+/-1.0) x 10(18)/cm(3), respectively, at 850 degreesC by fitting experimentally obtained profiles. This value of diffusion coefficient is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge. (C) 2001 American Institute of Physics.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	JOURNAL OF APPLIED PHYSICS
Publisher:	AMER INST PHYSICS
ISSN:	0021-8979
Date:	15 October 2001
Volume:	90
Number:	8
Number of Pages:	3
Page Range:	pp. 4293-4295
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/11680

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