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A NIXSW structural investigation of the (root 3 x root 3)R30 degrees-Cu2Si surface alloy phase formed by SiH4 reaction with Cu(111)
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UNSPECIFIED (2001) A NIXSW structural investigation of the (root 3 x root 3)R30 degrees-Cu2Si surface alloy phase formed by SiH4 reaction with Cu(111). Surface Science, 491 (1-2). L645-L650.
Full text not available from this repository, contact author.Abstract
The structure of the Cu(111)-(root3 X root3)R30 degrees -Cu2Si surface alloy has been determined using normal incidence X-ray standing wave (NIXSW) analysis. It comprises two equally populated, monolayer thick (root3 x root3)R30 degrees -Cu2Si domains. In one domain the silicon and copper atoms both reside in the fcc type threefold hollows, in the other they both reside in the hep type threefold hollows. For both domains the silicon atoms are 2.04 +/- 0.04 Angstrom from the substrate Cu(111) scatterer plane. (C) 2001 Elsevier Science B.V. All rights reserved.
| Item Type: | Journal Item | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QD Chemistry Q Science > QC Physics |
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| Journal or Publication Title: | Surface Science | ||||
| Publisher: | ELSEVIER SCIENCE BV | ||||
| ISSN: | 0039-6028 | ||||
| Official Date: | 20 September 2001 | ||||
| Dates: |
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| Volume: | 491 | ||||
| Number: | 1-2 | ||||
| Number of Pages: | 6 | ||||
| Page Range: | L645-L650 | ||||
| Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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