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Minority carrier lifetime in indium doped silicon for photovoltaics
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Murphy, John D., Pointon, A. I., Grant, Nicholas E., Shah, V. A., Myronov, Maksym, Voronkov, Vladimir V. and Falster, R. J. (2019) Minority carrier lifetime in indium doped silicon for photovoltaics. Progress in Photovoltaics : Research and Applications, 27 (10). pp. 844-855. doi:10.1002/pip.3172
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Official URL: https://doi.org/10.1002/pip.3172
Abstract
For photovoltaics, switching the p‐type dopant in silicon wafers from boron to indium may be advantageous as boron plays an important role in the light‐induced degradation mechanism. With the continuous Czochralski crystal growth process it is now possible to produce indium doped silicon substrates with the required doping levels for solar cells. This study aims to understand factors controlling the minority carrier lifetime in such substrates with a view to enabling the quantification of the possible benefits of indium doped material. Experiments are performed using temperature‐dependent Hall effect and injection‐dependent carrier lifetime measurements. The recombination rate is found to vary linearly with the concentration of un‐ionized indium which exists in the sample at room temperature due to indium's relatively deep acceptor level at 0.15 eV from the valence band. Lifetime in indium doped silicon is also shown to degrade rapidly under illumination, but to a level substantially higher than in equivalent boron doped silicon samples. A window of opportunity exists in which the minority carrier lifetime in degraded indium doped silicon is higher than the equivalent boron doped silicon, indicating it may be suitable as the base material for front contact photovoltaic cells.
| Item Type: | Journal Article | |||||||||
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| Divisions: | Faculty of Science > Engineering | |||||||||
| Journal or Publication Title: | Progress in Photovoltaics : Research and Applications | |||||||||
| Publisher: | Wiley - V C H Verlag GmbH & Co. KGaA | |||||||||
| ISSN: | 1099-159X | |||||||||
| Official Date: | October 2019 | |||||||||
| Dates: |
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| Date of first compliant deposit: | 6 August 2019 | |||||||||
| Volume: | 27 | |||||||||
| Number: | 10 | |||||||||
| Page Range: | pp. 844-855 | |||||||||
| DOI: | 10.1002/pip.3172 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Access rights to Published version: | Open Access | |||||||||
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