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Iodine-ethanol surface passivation for measurement of millisecond carrier lifetimes in silicon wafers with different crystallographic orientations
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Al-Amin, Mohammad, Grant, Nicholas E., Pointon, A. I. and Murphy, J. D. (2019) Iodine-ethanol surface passivation for measurement of millisecond carrier lifetimes in silicon wafers with different crystallographic orientations. Physica Status Solidi A, 216 (17). 1900257. doi:10.1002/pssa.201900257
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WRAP-iodine-ethanol-surface-passivation-millisecond-carrier-silicon-Murphy-2019.pdf - Accepted Version - Requires a PDF viewer. Download (1717Kb) | Preview |
Official URL: http://doi.org/10.1002/pssa.201900257
Abstract
To improve silicon device fabrication processes it is necessary to monitor bulk minority carrier lifetimes accurately, and this requires surface recombination to be well controlled and, ideally, minimized. Good surface passivation can result from thermal oxidation or by deposition of dielectrics (e.g. Al2O3, SiNx, amorphous Si), but these forms of passivation can modify the lifetime of the material under investigation. Various schemes can passivate surfaces on a temporary basis without modifying the bulk, and, in this paper, the virtues of the iodine‐ethanol temporary surface passivation scheme are explored. A procedure for preparing the wafer surfaces prior to passivation is developed. For the optimised pre‐treatment, a series of experiments on 3–5 Ωcm float‐zone wafers cut from the same ingot with different thicknesses is conducted. This enables the material's bulk lifetime to be measured at 1015 cm−3 injection as ≈46 ms, with the surface recombination velocity being 6.5 ± 0.3 cm s−1. Iodine‐ethanol passivation is then compared to a recently developed superacid‐derived temporary passivation scheme. Although the latter is superior on (100)‐orientation substrates, iodine‐ethanol performs much better on (111)‐orientation substrates, making it a better choice for (111)‐orientation wafers, such as those used for power devices.
| Item Type: | Journal Article | |||||||||||||||
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| Subjects: | Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | |||||||||||||||
| Library of Congress Subject Headings (LCSH): | Silicon -- Research, Passivity (Chemistry), Surface chemistry, Electrochemical analysis, Superacids, Iodine, Ethanol | |||||||||||||||
| Journal or Publication Title: | Physica Status Solidi A | |||||||||||||||
| Publisher: | Wiley-VCH Verlag GMBH | |||||||||||||||
| ISSN: | 1862-6300 | |||||||||||||||
| Official Date: | September 2019 | |||||||||||||||
| Dates: |
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| Volume: | 216 | |||||||||||||||
| Number: | 17 | |||||||||||||||
| Article Number: | 1900257 | |||||||||||||||
| DOI: | 10.1002/pssa.201900257 | |||||||||||||||
| Status: | Peer Reviewed | |||||||||||||||
| Publication Status: | Published | |||||||||||||||
| Reuse Statement (publisher, data, author rights): | "This is the peer reviewed version of the following article: Al-Amin, M. , Grant, N. E., Pointon, A. I. and Murphy, J. D. (2019), Iodine‐Ethanol Surface Passivation for Measurement of Millisecond Carrier Lifetimes in Silicon Wafers with Different Crystallographic Orientations. Phys. Status Solidi A. Accepted Author Manuscript, which has been published in final form at 10.1002/pssa.201900257. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions." | |||||||||||||||
| Access rights to Published version: | Restricted or Subscription Access | |||||||||||||||
| RIOXX Funder/Project Grant: |
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