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Data for Iodine-ethanol surface passivation for measurement of millisecond carrier lifetimes in silicon wafers with different crystallographic orientations
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Al-Amin, Mohammad, Grant, Nicholas E., Pointon, A. I. and Murphy, J. D. (2019) Data for Iodine-ethanol surface passivation for measurement of millisecond carrier lifetimes in silicon wafers with different crystallographic orientations. [Dataset]
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Plain Text (Readme file)
2019-06-14 readme text for WRAP.txt - Published Version Available under License Creative Commons Attribution 4.0. Download (598b) |
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Microsoft Excel (Data underpinning figures in related publication)
2019-06-14 Dataset for WRAP.xlsx - Published Version Available under License Creative Commons Attribution 4.0. Download (41Kb) |
Official URL: http://wrap.warwick.ac.uk/119210
Abstract
To improve silicon device fabrication processes it is necessary to monitor bulk minority carrier lifetimes accurately, and this requires surface recombination to be well controlled and, ideally, minimized. Good surface passivation can result from thermal oxidation or by deposition of dielectrics (e.g. Al2O3, SiNx, amorphous Si), but these forms of passivation can modify the lifetime of the material under investigation. Various schemes can passivate surfaces on a temporary basis without modifying the bulk, and, in this paper, the virtues of the iodine‐ethanol temporary surface passivation scheme are explored. A procedure for preparing the wafer surfaces prior to passivation is developed. For the optimised pre‐treatment, a series of experiments on 3–5 Ωcm float‐zone wafers cut from the same ingot with different thicknesses is conducted. This enables the material's bulk lifetime to be measured at 1015 cm−3 injection as ≈46 ms, with the surface recombination velocity being 6.5 ± 0.3 cm s−1. Iodine‐ethanol passivation is then compared to a recently developed superacid‐derived temporary passivation scheme. Although the latter is superior on (100)‐orientation substrates, iodine‐ethanol performs much better on (111)‐orientation substrates, making it a better choice for (111)‐orientation wafers, such as those used for power devices.
| Item Type: | Dataset | |||||||||||||||
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| Subjects: | Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | |||||||||||||||
| Type of Data: | Experimental data | |||||||||||||||
| Library of Congress Subject Headings (LCSH): | Silicon -- Research, Passivity (Chemistry), Surface chemistry, Electrochemical analysis, Superacids, Iodine, Ethanol | |||||||||||||||
| Journal or Publication Title: | Physica Status Solidi A | |||||||||||||||
| Publisher: | University of Warwick, School of Engineering | |||||||||||||||
| ISSN: | 1862-6300 | |||||||||||||||
| Official Date: | 26 June 2019 | |||||||||||||||
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| Status: | Not Peer Reviewed | |||||||||||||||
| Publication Status: | Published | |||||||||||||||
| Media of Output (format): | .xlsx | |||||||||||||||
| Access rights to Published version: | Open Access | |||||||||||||||
| Copyright Holders: | University of Warwick | |||||||||||||||
| Description: | The dataset (a single file in XLSX format) contains the data behind the figures in the paper. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper. |
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