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Robustness and reliability review of Si and SiC FET devices for more-electric-aircraft applications
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Ortiz-Gonzalez, Jose Angel , Wu, Ruizhu, Nereus Agbo, Sunday and Alatise, Olayiwola M. (2019) Robustness and reliability review of Si and SiC FET devices for more-electric-aircraft applications. Microelectronics Reliability, 100-101 . 113324. doi:10.1016/j.microrel.2019.06.016 ISSN 0026-2714.
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WRAP-robustness-reliability-review-devices-electric-Ortiz-Gonzalez-2019.pdf - Accepted Version - Requires a PDF viewer. Available under License Creative Commons Attribution Non-commercial No Derivatives 4.0. Download (619Kb) | Preview |
Official URL: https://doi.org/10.1016/j.microrel.2019.06.016
Abstract
Increased electrification of traditionally hydraulic and pneumatic functions on aircrafts has put power electronics at the heart of modern aviation. Aircraft electrical power systems have traditionally operated at 115 V AC and 28 V DC with a constant speed generator and transformer rectifier units converting jet engine power into electrical power. However, due to the increasing trend towards the More Electric Aircraft (MEA), 270 V DC systems are likely in the future. This calls into question, the power semiconductor device technology that enables the on-board power converters needed for electro-mechanical actuation as well as solid-state circuit breakers for system protection. Silicon IGBTs have been the work-horse of power electronics, but as switching speeds increase due to the need for high frequency operation, the bipolar nature of IGBT tail currents become a limiting factor for improved energy conversion efficiency. A number of unipolar FET technologies, including SiC trench MOSFETs, SiC planar MOSFETs, silicon super-junction MOSFETs and SiC JFETs in cascode with a low voltage Si MOSFET, have become commercialized at around 650 V. However, reliability and robustness, especially against single event burn-out and/or single event gate rupture is critical. This paper experimentally investigates the performance of the listed FET devices under Unclamped Inductive Switching and Bias Temperature Instability/gate oxide stress tests.
| Item Type: | Journal Article | ||||||
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| Subjects: | T Technology > TL Motor vehicles. Aeronautics. Astronautics | ||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
| Library of Congress Subject Headings (LCSH): | Airplanes -- Auxiliary power supply, Silicon carbide -- Electric properties, Airplanes -- Batteries, Wide gap semiconductors | ||||||
| Journal or Publication Title: | Microelectronics Reliability | ||||||
| Publisher: | Pergamon-Elsevier Science Ltd. | ||||||
| ISSN: | 0026-2714 | ||||||
| Official Date: | 23 September 2019 | ||||||
| Dates: |
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| Volume: | 100-101 | ||||||
| Article Number: | 113324 | ||||||
| DOI: | 10.1016/j.microrel.2019.06.016 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Date of first compliant deposit: | 1 July 2019 | ||||||
| Date of first compliant Open Access: | 23 September 2020 | ||||||
| RIOXX Funder/Project Grant: |
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