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Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy
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Hodgson, P D, Bentley, M, Delli, E, Beanland, R., Wagener, M C, Botha, J R and Carrington, P J (2018) Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy. Semiconductor Science and Technology, 33 (12). 125021. doi:10.1088/1361-6641/aae627 ISSN 0268-1242.
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Official URL: http://dx.doi.org/10.1088/1361-6641/aae627
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||
| Journal or Publication Title: | Semiconductor Science and Technology | ||||||
| Publisher: | Institute of Physics Publishing Ltd. | ||||||
| ISSN: | 0268-1242 | ||||||
| Official Date: | December 2018 | ||||||
| Dates: |
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| Volume: | 33 | ||||||
| Number: | 12 | ||||||
| Article Number: | 125021 | ||||||
| DOI: | 10.1088/1361-6641/aae627 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Open Access (Creative Commons) |
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