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Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system
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UNSPECIFIED (2001) Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system. In: 14th International Conference on High Magntic Fields in Semiconductor Physicis (SemiMag 2000), KUNIBIKI-MESSE, JAPAN, SEP 24-29, 2000. Published in: PHYSICA B-CONDENSED MATTER, 298 (1-4). pp. 496-500. ISSN 0921-4526.
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Abstract
Weak localisation parameters have been determined for the 2D hole system in a strained Si/Si1-xGex heterostructure. It has been shown that by removing the effect of the lowest Landau level, the v = 2 to v = 1 quantum Hall effect transition can be considered to be a quantum Hall effect to Hall insulator transition, which can be roughly scaled using a temperature scaling exponent of kappa = 0.70 +/- 0.06. Previously, a similar kappa was determined for the v = 1 to Hall insulator transition in this sample. The experimental value of kappa is consistent with the theoretical value if the value of the temperature exponent of the phase relaxation time (p = 1.55) extracted from the low field weak localisation behaviour is utilised. (C) 2001 Elsevier Science B.V. All rights reserved.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | PHYSICA B-CONDENSED MATTER | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0921-4526 | ||||
Official Date: | April 2001 | ||||
Dates: |
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Volume: | 298 | ||||
Number: | 1-4 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 496-500 | ||||
Publication Status: | Published | ||||
Title of Event: | 14th International Conference on High Magntic Fields in Semiconductor Physicis (SemiMag 2000) | ||||
Location of Event: | KUNIBIKI-MESSE, JAPAN | ||||
Date(s) of Event: | SEP 24-29, 2000 |
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