UNSPECIFIED (2001) Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system. In: 14th International Conference on High Magntic Fields in Semiconductor Physicis (SemiMag 2000), SEP 24-29, 2000, KUNIBIKI-MESSE, JAPAN.

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Abstract

Weak localisation parameters have been determined for the 2D hole system in a strained Si/Si1-xGex heterostructure. It has been shown that by removing the effect of the lowest Landau level, the v = 2 to v = 1 quantum Hall effect transition can be considered to be a quantum Hall effect to Hall insulator transition, which can be roughly scaled using a temperature scaling exponent of kappa = 0.70 +/- 0.06. Previously, a similar kappa was determined for the v = 1 to Hall insulator transition in this sample. The experimental value of kappa is consistent with the theoretical value if the value of the temperature exponent of the phase relaxation time (p = 1.55) extracted from the low field weak localisation behaviour is utilised. (C) 2001 Elsevier Science B.V. All rights reserved.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QC Physics
Journal or Publication Title:	PHYSICA B-CONDENSED MATTER
Publisher:	ELSEVIER SCIENCE BV
ISSN:	0921-4526
Date:	April 2001
Volume:	298
Number:	1-4
Number of Pages:	5
Page Range:	pp. 496-500
Publication Status:	Published
Title of Event:	14th International Conference on High Magntic Fields in Semiconductor Physicis (SemiMag 2000)
Location of Event:	KUNIBIKI-MESSE, JAPAN
Date(s) of Event:	SEP 24-29, 2000
URI:	http://wrap.warwick.ac.uk/id/eprint/12125

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