Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system
UNSPECIFIED (2001) Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system. In: 14th International Conference on High Magntic Fields in Semiconductor Physicis (SemiMag 2000), KUNIBIKI-MESSE, JAPAN, SEP 24-29, 2000. Published in: PHYSICA B-CONDENSED MATTER, 298 (1-4). pp. 496-500.Full text not available from this repository.
Weak localisation parameters have been determined for the 2D hole system in a strained Si/Si1-xGex heterostructure. It has been shown that by removing the effect of the lowest Landau level, the v = 2 to v = 1 quantum Hall effect transition can be considered to be a quantum Hall effect to Hall insulator transition, which can be roughly scaled using a temperature scaling exponent of kappa = 0.70 +/- 0.06. Previously, a similar kappa was determined for the v = 1 to Hall insulator transition in this sample. The experimental value of kappa is consistent with the theoretical value if the value of the temperature exponent of the phase relaxation time (p = 1.55) extracted from the low field weak localisation behaviour is utilised. (C) 2001 Elsevier Science B.V. All rights reserved.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||PHYSICA B-CONDENSED MATTER|
|Publisher:||ELSEVIER SCIENCE BV|
|Number of Pages:||5|
|Page Range:||pp. 496-500|
|Title of Event:||14th International Conference on High Magntic Fields in Semiconductor Physicis (SemiMag 2000)|
|Location of Event:||KUNIBIKI-MESSE, JAPAN|
|Date(s) of Event:||SEP 24-29, 2000|
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