On the mobility extraction for HMOSFETs
UNSPECIFIED. (2001) On the mobility extraction for HMOSFETs. SOLID-STATE ELECTRONICS, 45 (3). pp. 527-529. ISSN 0038-1101Full text not available from this repository.
Self-consistent Schroedinger-Poisson calculations have been employed to investigate theoretically the mobility extraction for hetero-MOSFETs or HMOSFETs with a thin gate oxide. In this particular case, the contribution of the cap layer to the gate capacitance is crucial. It is shown that there is a considerable error in the effective mobility when extracted with the common constant capacitance approximation and that application of the split-CV method is essential. (C) 2001 Elsevier Science Ltd. All rights reserved.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||SOLID-STATE ELECTRONICS|
|Publisher:||PERGAMON-ELSEVIER SCIENCE LTD|
|Official Date:||March 2001|
|Number of Pages:||3|
|Page Range:||pp. 527-529|
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