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Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
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Mohamed, A. H., Oxland, R., Aldegunde, M., Hepplestone, S. P., Sushko, P. V. and Kalna, K. (2018) Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS. Solid-State Electronics, 142 . pp. 31-35. doi:10.1016/j.sse.2018.01.006 ISSN 0038-1101.
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Official URL: http://dx.doi.org/10.1016/j.sse.2018.01.006
Item Type: | Journal Article | ||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Journal or Publication Title: | Solid-State Electronics | ||||||
Publisher: | Elsevier | ||||||
ISSN: | 0038-1101 | ||||||
Official Date: | April 2018 | ||||||
Dates: |
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Volume: | 142 | ||||||
Page Range: | pp. 31-35 | ||||||
DOI: | 10.1016/j.sse.2018.01.006 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access |
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