The Library
Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
Tools
Tools
Tools
Mohamed, A. H., Oxland, R., Aldegunde, M., Hepplestone, S. P., Sushko, P. V. and Kalna, K. (2018) Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS. Solid-State Electronics, 142 . pp. 31-35. doi:10.1016/j.sse.2018.01.006
Research output not available from this repository, contact author.
Official URL: http://dx.doi.org/10.1016/j.sse.2018.01.006
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Engineering | ||||||
| Journal or Publication Title: | Solid-State Electronics | ||||||
| Publisher: | Elsevier | ||||||
| ISSN: | 0038-1101 | ||||||
| Official Date: | April 2018 | ||||||
| Dates: |
|
||||||
| Volume: | 142 | ||||||
| Page Range: | pp. 31-35 | ||||||
| DOI: | 10.1016/j.sse.2018.01.006 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
