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Novel method for evaluation of negative bias temperature instability of SiC MOSFETs

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Gonzalez, Jose Ortiz, Alatise, Olayiwola M. and Mawby, Philip. A. (2019) Novel method for evaluation of negative bias temperature instability of SiC MOSFETs. Materials Science Forum, 963 . pp. 749-752. doi:10.4028/www.scientific.net/MSF.963.749 ISSN 1662-9752.

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Official URL: https://doi.org/10.4028/www.scientific.net/MSF.963...

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Abstract

The material properties of SiC make SiC power devices a superior alternative to the conventional Si power devices. However, the reliability of the gate oxide has been a major concern, limiting the adoption of SiC power MOSFETs as the power semiconductor of choice in applications which demand a high reliability. The threshold voltage (VTH) shift caused by Bias Temperature Instability (BTI) has focused the attention of different researchers, with multiple publications on this topic. This paper presents a novel method for evaluating the threshold voltage shift due to negative gate bias and its recovery when the gate bias stress is removed. This method could enable gate oxide reliability assessment techniques and contribute to new qualification methods.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title: Materials Science Forum
Publisher: Trans Tech Publications Ltd.
ISSN: 1662-9752
Official Date: 19 July 2019
Dates:
DateEvent
19 July 2019Available
15 January 2019Accepted
Volume: 963
Page Range: pp. 749-752
DOI: 10.4028/www.scientific.net/MSF.963.749
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 18 July 2019
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/R004366/1 ; EP/L021579/1EPSRCUNSPECIFIED
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