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Dynamic characterization of SiC and GaN devices with BTI stresses

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Gonzalez, Jose Ortiz, Hedayati, M., Jahdi, S., Stark , B. H. and Alatise, Olayiwola M. (2019) Dynamic characterization of SiC and GaN devices with BTI stresses. Microelectronics Reliability, 100-101 . 113389. doi:10.1016/j.microrel.2019.06.081 ISSN 0026-2714.

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Official URL: https://doi.org/10.1016/j.microrel.2019.06.081

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Abstract

The use of temperature sensitive electrical parameters for condition monitoring of power devices is widely acknowledged for conventional Si power devices. However, its use for wide bandgap devices is still the subject of research thereby making the electrothermal characterization of these devices a requirement, especially for GaN power devices. This paper investigates and compares the dynamic characteristics of SiC and GaN power devices and how these characteristics are affected by bias temperature instability from gate voltage stress. Results show that turn-ON dID/dt increases with temperature in SiC whereas it decreases with temperature in GaN. Turn-OFF dVDS/dt is marginally temperature dependent in both technologies. These electrical parameters can be subject to drift from gate oxide degradation due to charge trapping and threshold voltage drift. Initial VGS stress tests (at the rated voltages) on SiC and GaN devices show no apparent shift in VTH, however more sophisticated test methods using the body diode voltage as an indicator for VTH showed rapid VTH shift and recovery (within a few seconds) in SiC MOSFETs.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Electronic apparatus and appliances, Wide gap semiconductors, Gallium nitride -- Electric properties, Silicon carbide -- Electric properties, Power electronics
Journal or Publication Title: Microelectronics Reliability
Publisher: Pergamon-Elsevier Science Ltd.
ISSN: 0026-2714
Official Date: 23 September 2019
Dates:
DateEvent
23 September 2019Published
27 June 2019Accepted
Volume: 100-101
Article Number: 113389
DOI: 10.1016/j.microrel.2019.06.081
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 19 July 2019
Date of first compliant Open Access: 23 September 2020
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/R004366/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
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