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Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds
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Graziosi, Patrizio and Neophytou, Neophytos (2018) Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds. Journal of Applied Physics, 123 (8). 084503. doi:10.1063/1.5011328 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.5011328
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
| Journal or Publication Title: | Journal of Applied Physics | ||||||
| Publisher: | American Institute of Physics | ||||||
| ISSN: | 0021-8979 | ||||||
| Official Date: | February 2018 | ||||||
| Dates: |
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| Volume: | 123 | ||||||
| Number: | 8 | ||||||
| Article Number: | 084503 | ||||||
| DOI: | 10.1063/1.5011328 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access |
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