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Safe-operating-area of snubberless series connected silicon and SiC power devices

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Davletzhanova, Zarina, Dai, Tianxiang, Alatise, Olayiwola M., Gonzalez, Jose Ortiz, Mawby, Philip. A., Bonyadi, Roozbeh and Chan, Chun Wa (2018) Safe-operating-area of snubberless series connected silicon and SiC power devices. In: Energy Conversion Congress and Exposition, ECCE, IEEE, Portland, OR, USA, 23-27 Sep 2018. Published in: 2018 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 1875-1881. ISBN 9781479973132. doi:10.1109/ECCE.2018.8557402 ISSN 2329-3748.

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Official URL: http://dx.doi.org/10.1109/ECCE.2018.8557402

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Abstract

As power devices are series connected for voltage sharing, loss of gate drive synchronization and/or variation in device switching time constant can cause voltage imbalance. Capacitors (in snubbers) are usually added to maintain series voltage balance, however, in snubberless designs, where active gate drivers are used for voltage balancing during transients, it is necessary to evaluate the limits of the power device under transient unsynchronized switching. In series devices, desynchronization of the gate drivers in series connected devices will cause the faster switching device into avalanche during turn-OFF. Power device failure from BJT latch-up in MOSFETs and thyristor latch-up in IGBTs can result in potentially destructive consequences for the entire converter. Failure of the power device under avalanche is exacerbated by the (i) device commutation rate (ii) device junction temperature (iii) magnitude of gate drive switching mismatch and (iv) ratio of the DC bus voltage to intrinsic breakdown voltage of the device. This paper uses experimental measurements and finite element models to investigate the limits of power device failure under transient unsynchronized switching of series connected SiC trench MOSFET and silicon IGBT devices.

Item Type: Conference Item (Paper)
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Insulated gate bipolar transistors , Metal oxide semiconductor field-effect transistors, Metal oxide semiconductor field-effect transistors -- Electric properties, Silicon carbide -- Thermal properties
Journal or Publication Title: 2018 IEEE Energy Conversion Congress and Exposition (ECCE)
Publisher: IEEE
ISBN: 9781479973132
ISSN: 2329-3748
Book Title: 2018 IEEE Energy Conversion Congress and Exposition (ECCE)
Official Date: 6 December 2018
Dates:
DateEvent
6 December 2018Published
1 June 2018Accepted
Page Range: pp. 1875-1881
DOI: 10.1109/ECCE.2018.8557402
Status: Peer Reviewed
Publication Status: Published
Reuse Statement (publisher, data, author rights): © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 23 July 2019
Date of first compliant Open Access: 24 July 2019
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/R004366/1 [EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/L021579/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
Conference Paper Type: Paper
Title of Event: Energy Conversion Congress and Exposition, ECCE, IEEE
Type of Event: Conference
Location of Event: Portland, OR, USA
Date(s) of Event: 23-27 Sep 2018

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