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Safe-operating-area of snubberless series connected silicon and SiC power devices
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Davletzhanova, Zarina, Dai, Tianxiang, Alatise, Olayiwola M., Gonzalez, Jose Ortiz, Mawby, Philip. A., Bonyadi, Roozbeh and Chan, Chun Wa (2018) Safe-operating-area of snubberless series connected silicon and SiC power devices. In: Energy Conversion Congress and Exposition, ECCE, IEEE, Portland, OR, USA, 23-27 Sep 2018. Published in: 2018 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 1875-1881. ISBN 9781479973132. ISSN 2329-3748. doi:10.1109/ECCE.2018.8557402
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WRAP-safe-operating-area-snubberless-silicon-devices-Alatise-2018.pdf - Accepted Version - Requires a PDF viewer. Download (1554Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/ECCE.2018.8557402
Abstract
As power devices are series connected for voltage sharing, loss of gate drive synchronization and/or variation in device switching time constant can cause voltage imbalance. Capacitors (in snubbers) are usually added to maintain series voltage balance, however, in snubberless designs, where active gate drivers are used for voltage balancing during transients, it is necessary to evaluate the limits of the power device under transient unsynchronized switching. In series devices, desynchronization of the gate drivers in series connected devices will cause the faster switching device into avalanche during turn-OFF. Power device failure from BJT latch-up in MOSFETs and thyristor latch-up in IGBTs can result in potentially destructive consequences for the entire converter. Failure of the power device under avalanche is exacerbated by the (i) device commutation rate (ii) device junction temperature (iii) magnitude of gate drive switching mismatch and (iv) ratio of the DC bus voltage to intrinsic breakdown voltage of the device. This paper uses experimental measurements and finite element models to investigate the limits of power device failure under transient unsynchronized switching of series connected SiC trench MOSFET and silicon IGBT devices.
| Item Type: | Conference Item (Paper) | |||||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science > Engineering | |||||||||
| Library of Congress Subject Headings (LCSH): | Insulated gate bipolar transistors , Metal oxide semiconductor field-effect transistors, Metal oxide semiconductor field-effect transistors -- Electric properties, Silicon carbide -- Thermal properties | |||||||||
| Journal or Publication Title: | 2018 IEEE Energy Conversion Congress and Exposition (ECCE) | |||||||||
| Publisher: | IEEE | |||||||||
| ISBN: | 9781479973132 | |||||||||
| ISSN: | 2329-3748 | |||||||||
| Book Title: | 2018 IEEE Energy Conversion Congress and Exposition (ECCE) | |||||||||
| Official Date: | 6 December 2018 | |||||||||
| Dates: |
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| Date of first compliant deposit: | 23 July 2019 | |||||||||
| Page Range: | pp. 1875-1881 | |||||||||
| DOI: | 10.1109/ECCE.2018.8557402 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Publisher Statement: | © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||||||
| Access rights to Published version: | Restricted or Subscription Access | |||||||||
| RIOXX Funder/Project Grant: |
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| Conference Paper Type: | Paper | |||||||||
| Title of Event: | Energy Conversion Congress and Exposition, ECCE, IEEE | |||||||||
| Type of Event: | Conference | |||||||||
| Location of Event: | Portland, OR, USA | |||||||||
| Date(s) of Event: | 23-27 Sep 2018 |
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