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Characterization of BTI in SiC MOSFETs using third quadrant characteristics
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Gonzalez, Jose Ortiz, Alatise, Olayiwola M. and Mawby, Philip. A. (2019) Characterization of BTI in SiC MOSFETs using third quadrant characteristics. In: 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019. Published in: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 207-210. ISBN 9781728105802. ISSN 1946-0201. doi:10.1109/ISPSD.2019.8757624
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WRAP-Characterization-BTI-SiC-MOSFETs-third-quadrant-characteristics-Mawby-2019.pdf - Accepted Version - Requires a PDF viewer. Download (574Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/ISPSD.2019.8757624
Abstract
Bias Temperature Instability (BTI) is a reliability concern for SiC MOSFETs which can have serious implications in the application if the true extent of the threshold voltage shift is underestimated. In this paper the third quadrant characteristics of SiC MOSFETs are used for characterizing the impact of accelerated gate stresses, evaluating the peak threshold voltage shift and tracking the recovery after stress removal. This method allows the evaluation of the impact of cumulative pulsed stresses of both long and short duration, which can be fundamental for characterizing the dynamics of BTI-induced threshold voltage shift in SiC MOSFETs under repetitive switching at the rated and accelerated gate voltage stresses.
| Item Type: | Conference Item (Paper) | |||||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science > Engineering | |||||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Silicon carbide -- Electric properties | |||||||||
| Journal or Publication Title: | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) | |||||||||
| Publisher: | IEEE | |||||||||
| ISBN: | 9781728105802 | |||||||||
| ISSN: | 1946-0201 | |||||||||
| Book Title: | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) | |||||||||
| Official Date: | 11 July 2019 | |||||||||
| Dates: |
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| Date of first compliant deposit: | 23 July 2019 | |||||||||
| Page Range: | pp. 207-210 | |||||||||
| DOI: | 10.1109/ISPSD.2019.8757624 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Publisher Statement: | © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||||||
| Access rights to Published version: | Restricted or Subscription Access | |||||||||
| RIOXX Funder/Project Grant: |
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| Conference Paper Type: | Paper | |||||||||
| Title of Event: | 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) | |||||||||
| Type of Event: | Conference | |||||||||
| Location of Event: | Shanghai, China | |||||||||
| Date(s) of Event: | 19-23 May 2019 |
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