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New insights into the thermally activated defects in n-type float-zone silicon
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Zhu, Yan, Rougieux, Fiacre, Grant, Nicholas E., Mullins, Jack, De Guzman, Joyce Ann, Murphy, John D., Markevich, Vladimir P., Coletti, Gianluca, Peaker, Anthony R. and Hameiri, Ziv (2019) New insights into the thermally activated defects in n-type float-zone silicon. AIP Conference Proceedings, 2147 (1). 140014 . doi:10.1063/1.5123901
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WRAP-new-insights-thermally-activated-defects-n-type-float-zone-silicon-Murphy-2019.pdf - Accepted Version - Requires a PDF viewer. Download (653Kb) | Preview |
Official URL: http://doi.org/10.1063/1.5123901
Abstract
Float-zone silicon has been long assumed to be bulk defect free and stable. Nevertheless, recently it was found that upon annealing between 450 °C to 700 °C detrimental defects can be activated in this material. Previous studies via deep level transient spectroscopy have identified several defect levels. However, it is still not clear which of these levels have a substantial impact on the minority carrier lifetime. In this study, we determine the recombination parameters of the dominant defect level using a combination of deep level transient spectroscopy and temperature and injection dependent lifetime spectroscopy. Additionally, we investigated the effect of hydrogenation on the thermally activated defects in n-type float-zone silicon.
| Item Type: | Journal Article | |||||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | |||||||||
| Divisions: | Faculty of Science > Engineering | |||||||||
| Library of Congress Subject Headings (LCSH): | Photovoltaic power generation, Zone melting, Silicon, Semiconductors -- Purification, Solar cells | |||||||||
| Journal or Publication Title: | AIP Conference Proceedings | |||||||||
| Publisher: | American Institute of Physics | |||||||||
| ISSN: | 0094-243X | |||||||||
| Official Date: | 27 August 2019 | |||||||||
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| Volume: | 2147 | |||||||||
| Number: | 1 | |||||||||
| Article Number: | 140014 | |||||||||
| DOI: | 10.1063/1.5123901 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Publisher Statement: | The following article has been accepted by AIP Conference Proceedings. After it is published, it will be found at https://aip.scitation.org/journal/apc | |||||||||
| Access rights to Published version: | Restricted or Subscription Access | |||||||||
| RIOXX Funder/Project Grant: |
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