The Library
Improving current controllability in bi-mode gate commutated thyristors
Tools
Tools
Tools
Lophitis, Neophytos, Antoniou, M., Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Nistor, Iulian, Vobecky, Jan and Rahimo, Munaf (2015) Improving current controllability in bi-mode gate commutated thyristors. IEEE Transactions on Electron Devices, 62 (7). pp. 2263-2269. doi:10.1109/TED.2015.2428994
Research output not available from this repository, contact author.
Official URL: http://dx.doi.org/10.1109/TED.2015.2428994
Abstract
The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Engineering | ||||||
| Journal or Publication Title: | IEEE Transactions on Electron Devices | ||||||
| Publisher: | IEEE | ||||||
| ISSN: | 0018-9383 | ||||||
| Official Date: | 22 May 2015 | ||||||
| Dates: |
|
||||||
| Volume: | 62 | ||||||
| Number: | 7 | ||||||
| Page Range: | pp. 2263-2269 | ||||||
| DOI: | 10.1109/TED.2015.2428994 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Related URLs: |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
