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Improving current controllability in bi-mode gate commutated thyristors

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Lophitis, Neophytos, Antoniou, M., Udrea, Florin, Vemulapati, Umamaheswara, Arnold, Martin, Nistor, Iulian, Vobecky, Jan and Rahimo, Munaf (2015) Improving current controllability in bi-mode gate commutated thyristors. IEEE Transactions on Electron Devices, 62 (7). pp. 2263-2269. doi:10.1109/TED.2015.2428994

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Official URL: http://dx.doi.org/10.1109/TED.2015.2428994

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Abstract

The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized.

Item Type: Journal Article
Divisions: Faculty of Science > Engineering
Journal or Publication Title: IEEE Transactions on Electron Devices
Publisher: IEEE
ISSN: 0018-9383
Official Date: 22 May 2015
Dates:
DateEvent
22 May 2015Published
29 April 2015Accepted
Volume: 62
Number: 7
Page Range: pp. 2263-2269
DOI: 10.1109/TED.2015.2428994
Status: Peer Reviewed
Publication Status: Published
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