Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

On the investigation of the "anode side" SuperJunction IGBT design concept

Tools
- Tools
+ Tools

Antoniou, M., Lophitis, Neophytos, Udrea, Florin, Bauer, Friedhelm, Vemulapati, Umamaheswara Reddy and Badstuebner, Uwe (2017) On the investigation of the "anode side" SuperJunction IGBT design concept. IEEE Electron Device Letters, 38 (8). pp. 1063-1066. doi:10.1109/LED.2017.2718619 ISSN 0741-3106.

Research output not available from this repository.

Request-a-Copy directly from author or use local Library Get it For Me service.

Official URL: http://dx.doi.org/10.1109/LED.2017.2718619

Request Changes to record.

Abstract

In this letter, we present the “anode-side” SuperJunction trench field stop+ IGBT concept with drift region SuperJunction pillars placed at the anode side of the structure rather than the cathode side. The extent of the pillars toward the cathode side is shown to pose a tradeoff between fabrication technology capabilities (and cost) versus the device performance, by extensive TCAD simulations. The proposed device structure simplifies the fabrication requirements by steering clear from the need to align the cathode side features with the SuperJunction pillars. It also provides an extra degree of freedom by decoupling the cathode design from the SuperJunction structure. Additionally, the presence of SuperJunction technology in the drift region of the “anode-side” SJ Trench FS+ IGBT results in 20% reduction of ON-state losses for the same switching energy losses or, up to 30% switching losses reduction for the same ON-state voltage drop, compared with a 1.2-kV breakdown rated conventional FS+ Trench IGBT device. The proposed structure also finds applications in reverse conducting IGBTs, where a reduced snapback can be achieved, and in MOS-controlled thyristor devices.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title: IEEE Electron Device Letters
Publisher: IEEE
ISSN: 0741-3106
Official Date: 22 June 2017
Dates:
DateEvent
22 June 2017Published
19 June 2017Accepted
Volume: 38
Number: 8
Page Range: pp. 1063-1066
DOI: 10.1109/LED.2017.2718619
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Related URLs:
  • Other Repository

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us