Low-temperature electron transport in Si with an MBE-grown Sb delta layer
UNSPECIFIED. (2001) Low-temperature electron transport in Si with an MBE-grown Sb delta layer. PHYSICAL REVIEW B, 6307 (7). -. ISSN 0163-1829Full text not available from this repository.
Studies of the electrical properties of Si single crystals with delta (Sb) layers of various sheet densities N-D, of Sb atoms (5 x 10(12)-3 x 10(14) cm(-2)) have furnished detailed information about the low-temperature features of the electron transport in this system. The metal-type conductivity of delta layers at N-D greater than or equal to 3 x 10(13) cm(-2) exhibits manifestations of the weak localization of electrons and electron-electron interaction in a two-dimensional system. The temperature dependence of electron phase relaxation time, the spin-orbit interaction time, and parameter lambda (D) of the electron-electron interaction are determined. It is found that a decrease in the electron density in the delta layer is accompanied by decrease in the parameter lambda (D). The effect of electron heating by an electric field is used to find the temperature dependence of the electron-phonon relaxation time. At low temperature the hopping-type conductivity of delta layers at N(D)less than or equal to 1x10(13) cm(-2) is realized: at sufficiently low temperatures (<10 K) the two-dimensional Mott law of variable-range hopping is seen. The nonlinearity of the current-voltage characteristics observed is well described by the theory of non-Ohmic hopping conductivity in moderately strong electric fields.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||PHYSICAL REVIEW B|
|Publisher:||AMERICAN PHYSICAL SOC|
|Date:||15 February 2001|
|Number of Pages:||11|
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