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An investigation of segregation-induced interface broadening in p-channel SiGe/Si MOSFET device structures by electron energy-loss imaging

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Norris, D. J., Cullis, A. G., Grasby, T. J. and Parker, Evan H. C. (2000) An investigation of segregation-induced interface broadening in p-channel SiGe/Si MOSFET device structures by electron energy-loss imaging. In: Conference on Microscopy of Semiconducting Materials, Oxford, England, 22-25 Mar 1999. Published in: Microscopy of Semiconducting Materials: 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK (Number 164). pp. 215-218. ISBN 0750306505. ISSN 0951-3248.

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Abstract

SiGe p-channel heteroepitaxial MOS transistor test structures, fabricated by molecular beam epitaxy, have been investigated using high resolution transmission electron microscopy and electron energy-loss imaging. Using these techniques, we have been able, for the first time, to quantitatively determine the nanoscale Ge distribution across a typical SiGe alloy channel. The Ge profile across the alloy channel was found to be asymmetrical due to the occurrence of segregation, with an exponential-like distribution directed towards the surface. The results match closely with the Ge profile predicted by segregation theory.

Item Type: Conference Item (Paper)
Subjects: Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Series Name: Institute of Physics Conference Series
Journal or Publication Title: Microscopy of Semiconducting Materials: 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK
Publisher: CRC Press
ISBN: 0750306505
ISSN: 0951-3248
Editor: Cullis, A. G. and Beanland, R.
Official Date: 1 January 2000
Dates:
DateEvent
1 January 2000Published
Number: Number 164
Number of Pages: 4
Page Range: pp. 215-218
Status: Peer Reviewed
Publication Status: Published
Conference Paper Type: Paper
Title of Event: Conference on Microscopy of Semiconducting Materials
Type of Event: Conference
Location of Event: Oxford, England
Date(s) of Event: 22-25 Mar 1999

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