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An investigation of segregation-induced interface broadening in p-channel SiGe/Si MOSFET device structures by electron energy-loss imaging
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Norris, D. J., Cullis, A. G., Grasby, T. J. and Parker, Evan H. C. (2000) An investigation of segregation-induced interface broadening in p-channel SiGe/Si MOSFET device structures by electron energy-loss imaging. In: Conference on Microscopy of Semiconducting Materials, Oxford, England, 22-25 Mar 1999. Published in: Microscopy of Semiconducting Materials: 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK (Number 164). pp. 215-218. ISBN 0750306505. ISSN 0951-3248.
Full text not available from this repository, contact author.Abstract
SiGe p-channel heteroepitaxial MOS transistor test structures, fabricated by molecular beam epitaxy, have been investigated using high resolution transmission electron microscopy and electron energy-loss imaging. Using these techniques, we have been able, for the first time, to quantitatively determine the nanoscale Ge distribution across a typical SiGe alloy channel. The Ge profile across the alloy channel was found to be asymmetrical due to the occurrence of segregation, with an exponential-like distribution directed towards the surface. The results match closely with the Ge profile predicted by segregation theory.
| Item Type: | Conference Item (Paper) | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Divisions: | Faculty of Science > Physics | ||||
| Series Name: | Institute of Physics Conference Series | ||||
| Journal or Publication Title: | Microscopy of Semiconducting Materials: 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK | ||||
| Publisher: | CRC Press | ||||
| ISBN: | 0750306505 | ||||
| ISSN: | 0951-3248 | ||||
| Editor: | Cullis, A. G. and Beanland, R. | ||||
| Official Date: | 1 January 2000 | ||||
| Dates: |
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| Number: | Number 164 | ||||
| Number of Pages: | 4 | ||||
| Page Range: | pp. 215-218 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Conference Paper Type: | Paper | ||||
| Title of Event: | Conference on Microscopy of Semiconducting Materials | ||||
| Type of Event: | Conference | ||||
| Location of Event: | Oxford, England | ||||
| Date(s) of Event: | 22-25 Mar 1999 |
Data sourced from Thomson Reuters' Web of Knowledge
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