An investigation of segregation-induced interface broadening in p-channel SiGe/Si MOSFET device structures by electron energy-loss imaging
UNSPECIFIED (1999) An investigation of segregation-induced interface broadening in p-channel SiGe/Si MOSFET device structures by electron energy-loss imaging. In: Conference on Microscopy of Semiconducting Materials, UNIV OXFORD, OXFORD, ENGLAND, MAR 22-25, 1999. Published in: MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS (164). pp. 215-218.Full text not available from this repository.
SiGe p-channel heteroepitaxial MOS transistor test structures, fabricated by molecular beam epitaxy, have been investigated using high resolution transmission electron microscopy and electron energy-loss imaging. Using these techniques, we have been able, for the first time, to quantitatively determine the nanoscale Ge distribution across a typical SiGe alloy channel. The Ge profile across the alloy channel was found to be asymmetrical due to the occurrence of segregation, with an exponential-like distribution directed towards the surface. The results match closely with the Ge profile predicted by segregation theory.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QC Physics|
|Series Name:||INSTITUTE OF PHYSICS CONFERENCE SERIES|
|Journal or Publication Title:||MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS|
|Publisher:||IOP PUBLISHING LTD|
|Editor:||Cullis, AG and Beanland, R|
|Number of Pages:||4|
|Page Range:||pp. 215-218|
|Title of Event:||Conference on Microscopy of Semiconducting Materials|
|Location of Event:||UNIV OXFORD, OXFORD, ENGLAND|
|Date(s) of Event:||MAR 22-25, 1999|
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