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An investigation of segregation-induced interface broadening in p-channel SiGe/Si MOSFET device structures by electron energy-loss imaging
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UNSPECIFIED (1999) An investigation of segregation-induced interface broadening in p-channel SiGe/Si MOSFET device structures by electron energy-loss imaging. In: Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND.
Full text not available from this repository.Abstract
SiGe p-channel heteroepitaxial MOS transistor test structures, fabricated by molecular beam epitaxy, have been investigated using high resolution transmission electron microscopy and electron energy-loss imaging. Using these techniques, we have been able, for the first time, to quantitatively determine the nanoscale Ge distribution across a typical SiGe alloy channel. The Ge profile across the alloy channel was found to be asymmetrical due to the occurrence of segregation, with an exponential-like distribution directed towards the surface. The results match closely with the Ge profile predicted by segregation theory.
| Item Type: | Conference Item (UNSPECIFIED) |
|---|---|
| Subjects: | Q Science > QC Physics |
| Series Name: | INSTITUTE OF PHYSICS CONFERENCE SERIES |
| Journal or Publication Title: | MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS |
| Publisher: | IOP PUBLISHING LTD |
| ISBN: | 0-7503-0650-5 |
| ISSN: | 0951-3248 |
| Editor: | Cullis, AG and Beanland, R |
| Date: | 1999 |
| Number: | 164 |
| Number of Pages: | 4 |
| Page Range: | pp. 215-218 |
| Publication Status: | Published |
| Title of Event: | Conference on Microscopy of Semiconducting Materials |
| Location of Event: | UNIV OXFORD, OXFORD, ENGLAND |
| Date(s) of Event: | MAR 22-25, 1999 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/12463 |
Data sourced from Thomson Reuters' Web of Knowledge
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