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Crosstalk in SiC power MOSFETs for evaluation of threshold voltage shift caused by bias temperature instability
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Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2019) Crosstalk in SiC power MOSFETs for evaluation of threshold voltage shift caused by bias temperature instability. In: 21st European Conference on Power Electronics and Applications - EPE’19 ECCE – EUROPE Genoa, Genoa, Italy, 2-6 Sep 2019. Published in: 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) ISBN 9789075815313. doi:10.23919/EPE.2019.8915508
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WRAP-Crosstalk-SiC-power-MOSFETs-evaluation-threshold-voltage-shift-caused-bias-temperature-instability-OrtizGonzalez-2019.pdf - Accepted Version - Requires a PDF viewer. Download (1708Kb) | Preview |
Official URL: https://doi.org/10.23919/EPE.2019.8915508
Abstract
Threshold voltage drift from Bias Temperature Instability is known to be a reliability concern for SiC MOSFETs. Negative bias temperature instability (NBTI) results from positive charge trapping at the gate dielectric interface and is more problematic in SiC due to the higher interface trap density. Turning SiC MOSFETs OFF with negative voltages to avoid Miller coupling induced cross-talk can cause VTH shifts in periods with long standby duration and high temperatures. This paper proposes a novel test method for BTI characterization that relies on measuring the shoot-through current and charge during switching transients. The method exploits the Miller coupling between 2 devices in the same phase and uses the shoot-through current from parasitic turn-ON to monitor VTH. Standard techniques require the use of static measurements (typically from a parameter analyzer or a curve tracer) to determine the threshold voltage shift. These conventional methods can underestimate the VTH shift since the recovery from charge de-trapping can mask the true extent of the problem. The proposed methodology uses the actual converter environment to investigate the VTH shift and should therefore be of more interest to applications engineers as opposed to device physicists. Furthermore, it avoids the problem of VTH recovery and is therefore more accurate in VTH shift characterization.
| Item Type: | Conference Item (Paper) | ||||||||
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| Subjects: | Q Science > QC Physics T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TP Chemical technology |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
| Library of Congress Subject Headings (LCSH): | Silicon carbide, Metal oxide semiconductor field-effect transistors, Crosstalk, Wide gap semiconductors, Reliability (Engineering) | ||||||||
| Journal or Publication Title: | 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) | ||||||||
| Publisher: | IEEE | ||||||||
| ISBN: | 9789075815313 | ||||||||
| Book Title: | Energy Conversion in Natural and Artificial Photosynthesis | ||||||||
| Official Date: | 28 November 2019 | ||||||||
| Dates: |
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| DOI: | 10.23919/EPE.2019.8915508 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Reuse Statement (publisher, data, author rights): | © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| Date of first compliant deposit: | 13 September 2019 | ||||||||
| Date of first compliant Open Access: | 3 December 2019 | ||||||||
| RIOXX Funder/Project Grant: |
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| Conference Paper Type: | Paper | ||||||||
| Title of Event: | 21st European Conference on Power Electronics and Applications - EPE’19 ECCE – EUROPE Genoa | ||||||||
| Type of Event: | Conference | ||||||||
| Location of Event: | Genoa, Italy | ||||||||
| Date(s) of Event: | 2-6 Sep 2019 | ||||||||
| Related URLs: |
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