Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures
UNSPECIFIED (2001) Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures. JOURNAL OF APPLIED PHYSICS, 89 (1). pp. 76-79. ISSN 0021-8979Full text not available from this repository.
The incorporation of vacancy clusters and vacancy point defects during the growth of Si/Si0.64Ge0.36/Si structures has been observed for growth temperatures between 250 degreesC and 550 degreesC using positron annihilation spectroscopy. A strong correlation between the electrical characteristics of the structures and the size and concentration of the clusters is observed. For the onset of two-dimensional hole gas behavior, a defect concentration less than 5 x 10(16) cm(-3) is required. A further reduction in concentration below 1 x 10(16) cm(-3) results in optimum electrical performance. The depth at which defects are observed increases with decreasing growth temperature indicating defect mobility during growth or subsequent annealing. (C) 2001 American Institute of Physics.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF APPLIED PHYSICS|
|Publisher:||AMER INST PHYSICS|
|Date:||1 January 2001|
|Number of Pages:||4|
|Page Range:||pp. 76-79|
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