Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures

Tools
- Tools
+ Tools

UNSPECIFIED (2001) Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures. JOURNAL OF APPLIED PHYSICS, 89 (1). pp. 76-79.

Full text not available from this repository, contact author.

Request Changes to record.

Abstract

The incorporation of vacancy clusters and vacancy point defects during the growth of Si/Si0.64Ge0.36/Si structures has been observed for growth temperatures between 250 degreesC and 550 degreesC using positron annihilation spectroscopy. A strong correlation between the electrical characteristics of the structures and the size and concentration of the clusters is observed. For the onset of two-dimensional hole gas behavior, a defect concentration less than 5 x 10(16) cm(-3) is required. A further reduction in concentration below 1 x 10(16) cm(-3) results in optimum electrical performance. The depth at which defects are observed increases with decreasing growth temperature indicating defect mobility during growth or subsequent annealing. (C) 2001 American Institute of Physics.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Journal or Publication Title: JOURNAL OF APPLIED PHYSICS
Publisher: AMER INST PHYSICS
ISSN: 0021-8979
Official Date: 1 January 2001
Dates:
DateEvent
1 January 2001UNSPECIFIED
Volume: 89
Number: 1
Number of Pages: 4
Page Range: pp. 76-79
Publication Status: Published

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: publications@live.warwick.ac.uk
Contact Details
About Us