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Temperature dependence of the electron-phonon scattering time of charge carriers in p-Si/SiGe heterojunctions
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UNSPECIFIED. (2000) Temperature dependence of the electron-phonon scattering time of charge carriers in p-Si/SiGe heterojunctions. LOW TEMPERATURE PHYSICS, 26 (12). pp. 890-893. ISSN 1063-777X
Full text not available from this repository.Abstract
Si/Si0.64Ge0.36 heterojunctions with p-type conductivity exhibit an electron overheating effect. An analysis of the damping of the amplitudes of the Shubnikov-de Haas oscillations upon a change in temperature and applied electric field yields the temperature dependence of the electron-phonon relaxation time: t(eph)=10(-8)T(-2) s. (C) 2000 American Institute of Physics. [S1063-777X(00)00512-0].
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Journal or Publication Title: | LOW TEMPERATURE PHYSICS | ||||
| Publisher: | AMER INST PHYSICS | ||||
| ISSN: | 1063-777X | ||||
| Official Date: | December 2000 | ||||
| Dates: |
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| Volume: | 26 | ||||
| Number: | 12 | ||||
| Number of Pages: | 4 | ||||
| Page Range: | pp. 890-893 | ||||
| Publication Status: | Published | ||||
| URI: | http://wrap.warwick.ac.uk/id/eprint/12719 |
Data sourced from Thomson Reuters' Web of Knowledge
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