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Temperature dependence of the electron-phonon scattering time of charge carriers in p-Si/SiGe heterojunctions

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UNSPECIFIED (2000) Temperature dependence of the electron-phonon scattering time of charge carriers in p-Si/SiGe heterojunctions. LOW TEMPERATURE PHYSICS, 26 (12). pp. 890-893. ISSN 1063-777X.

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Abstract

Si/Si0.64Ge0.36 heterojunctions with p-type conductivity exhibit an electron overheating effect. An analysis of the damping of the amplitudes of the Shubnikov-de Haas oscillations upon a change in temperature and applied electric field yields the temperature dependence of the electron-phonon relaxation time: t(eph)=10(-8)T(-2) s. (C) 2000 American Institute of Physics. [S1063-777X(00)00512-0].

Item Type: Journal Article
Subjects: Q Science > QC Physics
Journal or Publication Title: LOW TEMPERATURE PHYSICS
Publisher: AMER INST PHYSICS
ISSN: 1063-777X
Official Date: December 2000
Dates:
DateEvent
December 2000UNSPECIFIED
Volume: 26
Number: 12
Number of Pages: 4
Page Range: pp. 890-893
Publication Status: Published

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