The Library
Temperature dependence of the electron-phonon scattering time of charge carriers in p-Si/SiGe heterojunctions
Tools
Tools
Tools
UNSPECIFIED. (2000) Temperature dependence of the electron-phonon scattering time of charge carriers in p-Si/SiGe heterojunctions. LOW TEMPERATURE PHYSICS, 26 (12). pp. 890-893. ISSN 1063-777X
Full text not available from this repository.Abstract
Si/Si0.64Ge0.36 heterojunctions with p-type conductivity exhibit an electron overheating effect. An analysis of the damping of the amplitudes of the Shubnikov-de Haas oscillations upon a change in temperature and applied electric field yields the temperature dependence of the electron-phonon relaxation time: t(eph)=10(-8)T(-2) s. (C) 2000 American Institute of Physics. [S1063-777X(00)00512-0].
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | LOW TEMPERATURE PHYSICS |
| Publisher: | AMER INST PHYSICS |
| ISSN: | 1063-777X |
| Date: | December 2000 |
| Volume: | 26 |
| Number: | 12 |
| Number of Pages: | 4 |
| Page Range: | pp. 890-893 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/12719 |
Data sourced from Thomson Reuters' Web of Knowledge
Actions (login required)
 |
View Item |
