Ortiz Gonzalez, Jose Angel, Wu, Robert, Jahdi, S. and Alatise, Olayiwola M. (2020) Performance and reliability review of 650V and 900V silicon and SiC devices : MOSFETs, cascode JFETs and IGBTs. IEEE Transactions on Industrial Electronics, 67 (9). pp. 7375-7385. doi:10.1109/TIE.2019.2945299 ISSN 0278-0046.

Preview	PDF WRAP-performance-reliability-silicon-devices-cascode-Ortiz-Gonzalez-2019.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (1817Kb) | Preview
	PDF WRAP-Performance-reliability-review-silicon-devices-cascode-Alatise-2019.pdf - Accepted Version Embargoed item. Restricted access to Repository staff only - Requires a PDF viewer. Download (2307Kb)

Request Changes to record.

Abstract

The future of power conversion at low-to-medium voltages (around 650V) poses a very interesting debate. At low voltages (below 100V), the silicon MOSFET reigns supreme and at the higher end of the automotive medium voltage application spectrum (approximately 1 kV and above) the SiC power MOSFET looks set to topple the dominance of the silicon IGBT. At very high voltages (4.5 kV, 6.5 kV and above) used for grid applications, the press-pack thyristor remains undisputed for current source converters and the press-pack IGBTs for voltage source converters. However, around 650 V, there does not seem to be a clear choice with all the major device manufacturers releasing different technology variants ranging from SiC Trench MOSFETs, SiC Planar MOSFETs, cascode-driven WBG FETs, silicon NPT and Field-stop IGBTs, silicon super-junction MOSFETs, standard silicon MOSFETs and enhancement mode GaN HEMTs. Each technology comes with its unique selling point with GaN being well known for ultra-high speed and compact integration, SiC is well known for high temperature, electro-thermal ruggedness and fast switching while silicon remains clearly dominant in cost and proven reliability. This review comparatively assesses the performance of some of these technologies, investigates their body diodes, discusses device reliability and avalanche ruggedness.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH):	Silicon carbide -- Electric properties, Power electronics, Diodes, Switching -- Silicon carbide -- heating, Metal oxide semiconductor field-effect transistors
Journal or Publication Title:	IEEE Transactions on Industrial Electronics
Publisher:	IEEE
ISSN:	0278-0046
Official Date:	September 2020
Dates:	Date Event September 2020 Published 8 October 2019 Available 17 September 2019 Accepted
Volume:	67
Number:	9
Page Range:	pp. 7375-7385
DOI:	10.1109/TIE.2019.2945299
Status:	Peer Reviewed
Publication Status:	Published
Reuse Statement (publisher, data, author rights):	© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Access rights to Published version:	Open Access (Creative Commons)
Date of first compliant deposit:	10 October 2019
Date of first compliant Open Access:	10 October 2019
RIOXX Funder/Project Grant:	Project/Grant ID RIOXX Funder Name Funder ID EP/R004366/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266

Request changes or add full text files to a record

Repository staff actions (login required)

View Item

Downloads