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Uprooting defects to enable high-performance III-V optoelectronic devices on silicon
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Bioud, Youcef A, Boucherif, Abderraouf, Myronov, Maksym, Soltani, Ali, Patriarche, Gilles, Braidy, Nadi, Jellite, Mourad, Drouin, Dominique and Arès, Richard (2019) Uprooting defects to enable high-performance III-V optoelectronic devices on silicon. Nature Communications, 10 (1). 4322. doi:10.1038/s41467-019-12353-9 ISSN 2041-1723.
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Official URL: https://doi.org/10.1038/s41467-019-12353-9
Abstract
The monolithic integration of III-V compound semiconductor devices with silicon presents physical and technological challenges, linked to the creation of defects during the deposition process. Herein, a new defect elimination strategy in highly mismatched heteroepitaxy is demonstrated to achieve a ultra-low dislocation density, epi-ready Ge/Si virtual substrate on a wafer scale, using a highly scalable process. Dislocations are eliminated from the epilayer through dislocation-selective electrochemical deep etching followed by thermal annealing, which creates nanovoids that attract dislocations, facilitating their subsequent annihilation. The averaged dislocation density is reduced by over three orders of magnitude, from ~108 cm-2 to a lower-limit of ~104 cm-2 for 1.5 µm thick Ge layer. The optical properties indicate a strong enhancement of luminescence efficiency in GaAs grown on this virtual substrate. Collectively, this work demonstrates the promise for transfer of this technology to industrial-scale production of integrated photonic and optoelectronic devices on Si platforms in a cost-effective way.
Item Type: | Journal Article | |||||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | |||||||||
SWORD Depositor: | Library Publications Router | |||||||||
Library of Congress Subject Headings (LCSH): | Compound semiconductors, Silicon -- Electric properties, Optoelectronic devices | |||||||||
Journal or Publication Title: | Nature Communications | |||||||||
Publisher: | Nature Publishing Group | |||||||||
ISSN: | 2041-1723 | |||||||||
Official Date: | 20 September 2019 | |||||||||
Dates: |
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Volume: | 10 | |||||||||
Number: | 1 | |||||||||
Article Number: | 4322 | |||||||||
DOI: | 10.1038/s41467-019-12353-9 | |||||||||
Status: | Peer Reviewed | |||||||||
Publication Status: | Published | |||||||||
Access rights to Published version: | Open Access (Creative Commons) | |||||||||
Date of first compliant deposit: | 28 November 2019 | |||||||||
Date of first compliant Open Access: | 28 November 2019 | |||||||||
RIOXX Funder/Project Grant: |
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