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Uprooting defects to enable high-performance III-V optoelectronic devices on silicon

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Bioud, Youcef A, Boucherif, Abderraouf, Myronov, Maksym, Soltani, Ali, Patriarche, Gilles, Braidy, Nadi, Jellite, Mourad, Drouin, Dominique and Arès, Richard (2019) Uprooting defects to enable high-performance III-V optoelectronic devices on silicon. Nature Communications, 10 (1). 4322. doi:10.1038/s41467-019-12353-9 ISSN 2041-1723.

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Official URL: https://doi.org/10.1038/s41467-019-12353-9

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Abstract

The monolithic integration of III-V compound semiconductor devices with silicon presents physical and technological challenges, linked to the creation of defects during the deposition process. Herein, a new defect elimination strategy in highly mismatched heteroepitaxy is demonstrated to achieve a ultra-low dislocation density, epi-ready Ge/Si virtual substrate on a wafer scale, using a highly scalable process. Dislocations are eliminated from the epilayer through dislocation-selective electrochemical deep etching followed by thermal annealing, which creates nanovoids that attract dislocations, facilitating their subsequent annihilation. The averaged dislocation density is reduced by over three orders of magnitude, from ~108 cm-2 to a lower-limit of ~104 cm-2 for 1.5 µm thick Ge layer. The optical properties indicate a strong enhancement of luminescence efficiency in GaAs grown on this virtual substrate. Collectively, this work demonstrates the promise for transfer of this technology to industrial-scale production of integrated photonic and optoelectronic devices on Si platforms in a cost-effective way.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
SWORD Depositor: Library Publications Router
Library of Congress Subject Headings (LCSH): Compound semiconductors, Silicon -- Electric properties, Optoelectronic devices
Journal or Publication Title: Nature Communications
Publisher: Nature Publishing Group
ISSN: 2041-1723
Official Date: 20 September 2019
Dates:
DateEvent
20 September 2019Published
15 August 2019Accepted
Volume: 10
Number: 1
Article Number: 4322
DOI: 10.1038/s41467-019-12353-9
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access (Creative Commons)
Date of first compliant deposit: 28 November 2019
Date of first compliant Open Access: 28 November 2019
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
UNSPECIFIED[NSERC] Natural Sciences and Engineering Research Council of Canadahttp://dx.doi.org/10.13039/501100000038
UNSPECIFIEDFonds de Recherche du Québec - Nature et Technologieshttp://dx.doi.org/10.13039/501100003151

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