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Study of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy
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UNSPECIFIED (2000) Study of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy. DEFECTS AND DIFFUSION IN SEMICONDUCTORS, 183-1 . pp. 207-213.
Full text not available from this repository, contact author.Abstract
Medium-energy coaxial impact-collision ion scattering spectroscopy has been used to study depth profiles and lattice locations of Sb atoms in Si/Sb(delta-doped)/Si(001) structures prepared by solid phase epitaxy. The Sb atoms are observed to diffuse into the Si capping layer at concentrations much higher than the solid solubility limit in a Si crystal. In addition, the concentration of diffused Sb atoms does not show a monotonic decrease with increasing distance from the delta-layer plane. The lattice locations of the diffused Sb atoms are found to be strongly dependent on the distance from the original Sb delta-layer. Correspondences are found between defects in Si crystals and the depth profile and the lattice location of Sb atoms. The results show that medium-energy coaxial impact-collision ion scattering spectroscopy is useful for analyzing diffusion and defects in semiconductors.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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| Series Name: | DEFECT AND DIFFUSION FORUM | ||||
| Journal or Publication Title: | DEFECTS AND DIFFUSION IN SEMICONDUCTORS | ||||
| Publisher: | SCITEC PUBLICATIONS LTD | ||||
| ISSN: | 1012-0386 | ||||
| Official Date: | 2000 | ||||
| Dates: |
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| Volume: | 183-1 | ||||
| Number of Pages: | 7 | ||||
| Page Range: | pp. 207-213 | ||||
| Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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