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Study of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy

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UNSPECIFIED (2000) Study of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy. DEFECTS AND DIFFUSION IN SEMICONDUCTORS, 183-1 . pp. 207-213. ISSN 1012-0386.

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Abstract

Medium-energy coaxial impact-collision ion scattering spectroscopy has been used to study depth profiles and lattice locations of Sb atoms in Si/Sb(delta-doped)/Si(001) structures prepared by solid phase epitaxy. The Sb atoms are observed to diffuse into the Si capping layer at concentrations much higher than the solid solubility limit in a Si crystal. In addition, the concentration of diffused Sb atoms does not show a monotonic decrease with increasing distance from the delta-layer plane. The lattice locations of the diffused Sb atoms are found to be strongly dependent on the distance from the original Sb delta-layer. Correspondences are found between defects in Si crystals and the depth profile and the lattice location of Sb atoms. The results show that medium-energy coaxial impact-collision ion scattering spectroscopy is useful for analyzing diffusion and defects in semiconductors.

Item Type: Journal Article
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Series Name: DEFECT AND DIFFUSION FORUM
Journal or Publication Title: DEFECTS AND DIFFUSION IN SEMICONDUCTORS
Publisher: SCITEC PUBLICATIONS LTD
ISSN: 1012-0386
Official Date: 2000
Dates:
DateEvent
2000UNSPECIFIED
Volume: 183-1
Number of Pages: 7
Page Range: pp. 207-213
Publication Status: Published

Data sourced from Thomson Reuters' Web of Knowledge

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