UNSPECIFIED (2000) Study of diffusion and defects by medium-energy coaxial impact-collision ion scattering spectroscopy. DEFECTS AND DIFFUSION IN SEMICONDUCTORS, 183-1 . pp. 207-213. ISSN 1012-0386.

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Abstract

Medium-energy coaxial impact-collision ion scattering spectroscopy has been used to study depth profiles and lattice locations of Sb atoms in Si/Sb(delta-doped)/Si(001) structures prepared by solid phase epitaxy. The Sb atoms are observed to diffuse into the Si capping layer at concentrations much higher than the solid solubility limit in a Si crystal. In addition, the concentration of diffused Sb atoms does not show a monotonic decrease with increasing distance from the delta-layer plane. The lattice locations of the diffused Sb atoms are found to be strongly dependent on the distance from the original Sb delta-layer. Correspondences are found between defects in Si crystals and the depth profile and the lattice location of Sb atoms. The results show that medium-energy coaxial impact-collision ion scattering spectroscopy is useful for analyzing diffusion and defects in semiconductors.

Item Type:	Journal Article
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Series Name:	DEFECT AND DIFFUSION FORUM
Journal or Publication Title:	DEFECTS AND DIFFUSION IN SEMICONDUCTORS
Publisher:	SCITEC PUBLICATIONS LTD
ISSN:	1012-0386
Official Date:	2000
Dates:	Date Event 2000 UNSPECIFIED
Volume:	183-1
Number of Pages:	7
Page Range:	pp. 207-213
Publication Status:	Published

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