X-ray standing wave study of wet-etch sulphur-treated InP(100) surfaces
UNSPECIFIED (2000) X-ray standing wave study of wet-etch sulphur-treated InP(100) surfaces. In: 7th International Conference on the Formation of Semiconductor Interfaces (ICFSI-7), GOTHENBURG, SWEDEN, JUN 21-25, 1999. Published in: Surface Science, 166 (1-4). pp. 196-200.Full text not available from this repository.
Normal incidence X-ray standing wave (NIXSW) measurements are presented for sulphur terminated InP(100) surfaces, prepared by wet-etch in (NH4)(2)S solution followed by UHV anneal. Standing wave profiles for sulphur Is photoyield in three planes (220, 311 and 31(1)under bar) indicate that sulphur is close to the phosphorus site. Coherent positions and fractions are compared with the predictions of a number of models of the surface, including novel 2 x 2 structures. The experimental data can be reproduced by a general two-dimer model, but it is more likely that the data are reflecting significant disorder. (C) 2000 Elsevier Science B.V. All rights reserved.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QD Chemistry
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||Surface Science|
|Publisher:||ELSEVIER SCIENCE BV|
|Date:||9 October 2000|
|Number of Pages:||5|
|Page Range:||pp. 196-200|
|Title of Event:||7th International Conference on the Formation of Semiconductor Interfaces (ICFSI-7)|
|Location of Event:||GOTHENBURG, SWEDEN|
|Date(s) of Event:||JUN 21-25, 1999|
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