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The potential of SiC Cascode JFETs in electric vehicle traction inverters
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Wu, Ruizhu, Gonzalez, Jose Ortiz, Davletzhanova, Zarina, Mawby, Philip. A. and Alatise, Olayiwola M. (2019) The potential of SiC Cascode JFETs in electric vehicle traction inverters. IEEE Transactions on Transportation Electrification . p. 1. doi:10.1109/TTE.2019.2954654 (In Press)
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WRAP-potential-SiC-cascode-vehicle-inverters-Wu-2019.pdf - Accepted Version - Requires a PDF viewer. Download (4Mb) | Preview |
Official URL: http://dx.doi.org/10.1109/TTE.2019.2954654
Abstract
The benefits of implementing SiC devices in EV powertrains has been widely reported in various studies. New generations of SiC devices including planar MOSFETs, trench MOSFETs and more recently, cascode JFETs have been released by various manufacturers. SiC cascode devices comprise of low voltage silicon MOSFETs for gate driving and high voltage depletion mode SiC JFETs for voltage blocking. These devices are particularly interesting because it avoids the known reliability issues of SiC gate oxide traps resulting in threshold voltage drift. In this paper, an EV powertrain is simulated using experimental measurements of conduction and switching energies of various SiC devices including 650V trench, 900V planar and 650V cascode JFETs. Unlike previous papers where losses are calculated using models based on datasheet parameters, here static and dynamic measurements on the power devices at different currents and temperatures are used to calculate losses over simulated driving cycles. Field-stop IGBTs are also evaluated. The 3-phase 2-level inverter model is electrothermal by accounting for the measured temperature dependence of the losses and uses accurate thermal networks derived from datasheets. Converter efficiency and thermal performance are compared for each device technology. Results show that SiC cascode JFETs have great potential in EV powertrain applications.
| Item Type: | Journal Article | |||||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TL Motor vehicles. Aeronautics. Astronautics T Technology > TP Chemical technology |
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| Divisions: | Faculty of Science > Engineering | |||||||||
| Library of Congress Subject Headings (LCSH): | Silicon carbide , Silicon carbide -- Electric properties , Electric vehicles , Field-effect transistors | |||||||||
| Journal or Publication Title: | IEEE Transactions on Transportation Electrification | |||||||||
| Publisher: | IEEE | |||||||||
| ISSN: | 2372-2088 | |||||||||
| Official Date: | 21 November 2019 | |||||||||
| Dates: |
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| Date of first compliant deposit: | 2 December 2019 | |||||||||
| Page Range: | p. 1 | |||||||||
| DOI: | 10.1109/TTE.2019.2954654 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | In Press | |||||||||
| Publisher Statement: | © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||||||
| Access rights to Published version: | Restricted or Subscription Access | |||||||||
| RIOXX Funder/Project Grant: |
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