The Library
Quantum interference effects in delta layers of boron in silicon
Tools
Tools
Tools
UNSPECIFIED (2000) Quantum interference effects in delta layers of boron in silicon. LOW TEMPERATURE PHYSICS, 26 (8). pp. 598-602. ISSN 1063-777X
Full text not available from this repository.Abstract
The behavior of the conductance upon changes in temperature (in the interval 1.5-40 K) and magnetic field (up to 20 kOe) is investigated for a series of samples with a delta < B > layer in Si, with hole concentrations in the conducting delta layer of 2.5x10(13)-2.2x10(14) cm(-2). It is shown that the temperature and field dependences obtained can be explained successfully as a manifestation of the weak localization effect and the interaction of mobile charge carriers (holes) in a two-dimensional electron system under conditions of strong spin-orbit interaction. An analysis of the behavior of the quantum corrections yields the temperature dependence of the phase relaxation time of the carriers, tau(Phi)=AT(-1), with A approximate to(1.4 +/- 0.3)x10(-12) K.s, where this temperature dependence is treated as a manifestation of hole-hole scattering processes, and the values of the interaction constants are also obtained (lambda(T)approximate to 0.64-0.73). (C) 2000 American Institute of Physics. [S1063-777X(00)01008-2].
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | LOW TEMPERATURE PHYSICS |
| Publisher: | AMER INST PHYSICS |
| ISSN: | 1063-777X |
| Date: | August 2000 |
| Volume: | 26 |
| Number: | 8 |
| Number of Pages: | 5 |
| Page Range: | pp. 598-602 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/13068 |
Data sourced from Thomson Reuters' Web of Knowledge
Actions (login required)
 |
View Item |
