Quantum interference effects in delta layers of boron in silicon
UNSPECIFIED (2000) Quantum interference effects in delta layers of boron in silicon. LOW TEMPERATURE PHYSICS, 26 (8). pp. 598-602. ISSN 1063-777XFull text not available from this repository.
The behavior of the conductance upon changes in temperature (in the interval 1.5-40 K) and magnetic field (up to 20 kOe) is investigated for a series of samples with a delta < B > layer in Si, with hole concentrations in the conducting delta layer of 2.5x10(13)-2.2x10(14) cm(-2). It is shown that the temperature and field dependences obtained can be explained successfully as a manifestation of the weak localization effect and the interaction of mobile charge carriers (holes) in a two-dimensional electron system under conditions of strong spin-orbit interaction. An analysis of the behavior of the quantum corrections yields the temperature dependence of the phase relaxation time of the carriers, tau(Phi)=AT(-1), with A approximate to(1.4 +/- 0.3)x10(-12) K.s, where this temperature dependence is treated as a manifestation of hole-hole scattering processes, and the values of the interaction constants are also obtained (lambda(T)approximate to 0.64-0.73). (C) 2000 American Institute of Physics. [S1063-777X(00)01008-2].
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||LOW TEMPERATURE PHYSICS|
|Publisher:||AMER INST PHYSICS|
|Number of Pages:||5|
|Page Range:||pp. 598-602|
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