Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Quantum effects in hole-type Si/SiGe heterojunctions

Tools
- Tools
+ Tools

UNSPECIFIED (2000) Quantum effects in hole-type Si/SiGe heterojunctions. LOW TEMPERATURE PHYSICS, 26 (8). pp. 609-614. ISSN 1063-777X.

Research output not available from this repository.

Request-a-Copy directly from author or use local Library Get it For Me service.

Request Changes to record.

Abstract

The temperature and magnetic-field dependences of the resistance of Si/SiGe heterojunctions with hole-type conductivity are investigated. It is shown that the features of these dependences are due to a manifestation of quantum interference effects - weak localization of the mobile charge carriers, and the hole-hole interaction in the two-dimensional electron system. On the basis of an analysis of the quantum interference effects, the temperature dependence of the dephasing time of the wave function of the charge carrier is determined: tau(Phi)=6.6x10(-12)T(-1) s. This dependence tau(Phi)proportional to T-1 must be regarded as a manifestation of hole-hole scattering processes in the two-dimensional electron system. The contribution to the magnetoresistance from the hole-hole interaction in the Cooper channel is extracted, and the corresponding interaction constant lambda(0)(C)approximate to 0.5 is found. (C) 2000 American Institute of Physics. [S1063-777X(00)01208-1].

Item Type: Journal Article
Subjects: Q Science > QC Physics
Journal or Publication Title: LOW TEMPERATURE PHYSICS
Publisher: AMER INST PHYSICS
ISSN: 1063-777X
Official Date: August 2000
Dates:
DateEvent
August 2000UNSPECIFIED
Volume: 26
Number: 8
Number of Pages: 6
Page Range: pp. 609-614
Publication Status: Published

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us