GasFETs incorporating conducting polymers as gate materials
UNSPECIFIED (2000) GasFETs incorporating conducting polymers as gate materials. In: 7th International Meeting on Chemical Sensors (IMCS-7), JUL 27-30, 1998, BEIJING, PEOPLES R CHINA.Full text not available from this repository.
A gas sensitive field effect transistor with a conducting polymer gate is described (polyFET). The devices were fabricated as gateless FETs in an aluminium gate pMOS process. Post-processing steps were performed to provide the gateless devices with polypyrrole gates. On exposing the transistor gates to volatile compounds, the polyFETs experience a change in their threshold voltage which, in an appropriate circuit, manifests itself as a change in drain-source current. A number of results are presented. (C) 2000 Elsevier Science S.A. All rights reserved.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QD Chemistry|
|Journal or Publication Title:||SENSORS AND ACTUATORS B-CHEMICAL|
|Publisher:||ELSEVIER SCIENCE SA|
|Date:||30 June 2000|
|Number of Pages:||4|
|Page Range:||pp. 253-256|
|Title of Event:||7th International Meeting on Chemical Sensors (IMCS-7)|
|Location of Event:||BEIJING, PEOPLES R CHINA|
|Date(s) of Event:||JUL 27-30, 1998|
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