UNSPECIFIED (2000) GasFETs incorporating conducting polymers as gate materials. In: 7th International Meeting on Chemical Sensors (IMCS-7), JUL 27-30, 1998, BEIJING, PEOPLES R CHINA.

Full text not available from this repository.

Abstract

A gas sensitive field effect transistor with a conducting polymer gate is described (polyFET). The devices were fabricated as gateless FETs in an aluminium gate pMOS process. Post-processing steps were performed to provide the gateless devices with polypyrrole gates. On exposing the transistor gates to volatile compounds, the polyFETs experience a change in their threshold voltage which, in an appropriate circuit, manifests itself as a change in drain-source current. A number of results are presented. (C) 2000 Elsevier Science S.A. All rights reserved.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QD Chemistry
Journal or Publication Title:	SENSORS AND ACTUATORS B-CHEMICAL
Publisher:	ELSEVIER SCIENCE SA
ISSN:	0925-4005
Date:	30 June 2000
Volume:	65
Number:	1-3
Number of Pages:	4
Page Range:	pp. 253-256
Publication Status:	Published
Title of Event:	7th International Meeting on Chemical Sensors (IMCS-7)
Location of Event:	BEIJING, PEOPLES R CHINA
Date(s) of Event:	JUL 27-30, 1998
URI:	http://wrap.warwick.ac.uk/id/eprint/13194

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item