A novel measurement method of segregating adlayers in MBE
UNSPECIFIED (2000) A novel measurement method of segregating adlayers in MBE. In: 1st Joint Conference on Silicon Epitaxy and Heterostructures (UC-Si), ZAO, JAPAN, SEP 12-17, 1999. Published in: THIN SOLID FILMS, 369 (1-2). pp. 138-142.Full text not available from this repository.
A novel method for measurement of the adatom density of segregating dopant atoms is suggested. The determination of the surface density is completely based on post growth concentration profile measurements. The dependancies of the surface segregation ratio on different growth parameters can be extracted. The method was tested on the segregation of boron in silicon (100) molecular beam epitaxy. The strong decay of segregation with decreasing temperature was confirmed and quantified for a selected set of parameters. The boron segregation was shown to be also strongly dependant on doping concentration. (C) 2000 Elsevier Science S.A. All rights reserved.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||THIN SOLID FILMS|
|Publisher:||ELSEVIER SCIENCE SA|
|Official Date:||3 July 2000|
|Number of Pages:||5|
|Page Range:||pp. 138-142|
|Title of Event:||1st Joint Conference on Silicon Epitaxy and Heterostructures (UC-Si)|
|Location of Event:||ZAO, JAPAN|
|Date(s) of Event:||SEP 12-17, 1999|
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