UNSPECIFIED (2000) A novel measurement method of segregating adlayers in MBE. In: 1st Joint Conference on Silicon Epitaxy and Heterostructures (UC-Si), SEP 12-17, 1999, ZAO, JAPAN.

Full text not available from this repository.

Abstract

A novel method for measurement of the adatom density of segregating dopant atoms is suggested. The determination of the surface density is completely based on post growth concentration profile measurements. The dependancies of the surface segregation ratio on different growth parameters can be extracted. The method was tested on the segregation of boron in silicon (100) molecular beam epitaxy. The strong decay of segregation with decreasing temperature was confirmed and quantified for a selected set of parameters. The boron segregation was shown to be also strongly dependant on doping concentration. (C) 2000 Elsevier Science S.A. All rights reserved.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	THIN SOLID FILMS
Publisher:	ELSEVIER SCIENCE SA
ISSN:	0040-6090
Date:	3 July 2000
Volume:	369
Number:	1-2
Number of Pages:	5
Page Range:	pp. 138-142
Publication Status:	Published
Title of Event:	1st Joint Conference on Silicon Epitaxy and Heterostructures (UC-Si)
Location of Event:	ZAO, JAPAN
Date(s) of Event:	SEP 12-17, 1999
URI:	http://wrap.warwick.ac.uk/id/eprint/13223

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item