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Si/SiGe/Si pMOS performance - alloy scattering and other considerations
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UNSPECIFIED (2000) Si/SiGe/Si pMOS performance - alloy scattering and other considerations. In: 1st Joint Conference on Silicon Epitaxy and Heterostructures (UC-Si), SEP 12-17, 1999, ZAO, JAPAN.
Full text not available from this repository.Abstract
Charge-carrier scattering in pseudomorphic p-channel Si/SiGe/Si heterostructures is reviewed. It is argued that current room-temperature field-effect device performance is limited by materials quality, particularly interface roughness and compositional inhomogeneity, rather than random alloy scattering. The way ahead is discussed. (C) 2000 Elsevier Science S.A. All rights reserved.
| Item Type: | Conference Item (UNSPECIFIED) |
|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
| Journal or Publication Title: | THIN SOLID FILMS |
| Publisher: | ELSEVIER SCIENCE SA |
| ISSN: | 0040-6090 |
| Date: | 3 July 2000 |
| Volume: | 369 |
| Number: | 1-2 |
| Number of Pages: | 9 |
| Page Range: | pp. 297-305 |
| Publication Status: | Published |
| Title of Event: | 1st Joint Conference on Silicon Epitaxy and Heterostructures (UC-Si) |
| Location of Event: | ZAO, JAPAN |
| Date(s) of Event: | SEP 12-17, 1999 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/13224 |
Data sourced from Thomson Reuters' Web of Knowledge
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