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The phonon-drag thermopower in Si : B and Si : Sb delta-doped samples

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UNSPECIFIED (2000) The phonon-drag thermopower in Si : B and Si : Sb delta-doped samples. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 15 (6). pp. 551-556. ISSN 0268-1242.

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Abstract

The thermal conductivity and the thermoelectric power of two dimensional hole and electron gases in B and Sb delta-doped Si structures have been measured for the first time. The temperature range was 1.4 K to 30 K, and carrier sheet densities were in the range 0.3 to 1.0 x 10(14) cm(-2). Kohn anomalies have been observed in all samples. The thermopower is dominated by the phonon drag contribution in each case. Calculations of the temperature dependence of the thermopower agree with experimental data when unscreened phonon scattering potentials are used for Si:B and Si:Sb.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Journal or Publication Title: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher: IOP PUBLISHING LTD
ISSN: 0268-1242
Official Date: June 2000
Dates:
DateEvent
June 2000UNSPECIFIED
Volume: 15
Number: 6
Number of Pages: 6
Page Range: pp. 551-556
Publication Status: Published

Data sourced from Thomson Reuters' Web of Knowledge

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