Ultra low energy SIMS, XTEM and X-ray diffraction methods for the characterization of a MBE grown short period (SinGem)(16) superlattices
UNSPECIFIED (2000) Ultra low energy SIMS, XTEM and X-ray diffraction methods for the characterization of a MBE grown short period (SinGem)(16) superlattices. In: 3rd International Conference on Molecular Beam Epitaxy-Growth Physics and Technology (MBE-GPT 99), WARSAW, POLAND, MAY 23-28, 1999. Published in: THIN SOLID FILMS, 367 (1-2). pp. 176-179.Full text not available from this repository.
The structural parameters (the layer thickness, interface roughness) for a 16-period (SinGem) superlattice grown by solid source molecular beam epitaxy (MBE) on Si(001) substrates were determined by high-resolution X-ray diffraction (HRXRD), X-ray reflectivity (XRR) and cross-sectional transmission electron microscopy (XTEM). The results were compared to the data obtained by ultra-low energy secondary ion mass spectrometry (ULE SIMS) method, using a 280 eV O-2(+) probe at 20 degrees to normal incidence. The differences in layer thickness values obtained from HRXRD, XRR and XTEM, ULE SIMS data, are explained in terms of significant microroughness at both the Si/Ge and Ge/Si interfaces. The n and m values were also determined by X-ray diffraction methods. (C) 2000 Elsevier Science S.A. All rights reserved.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||THIN SOLID FILMS|
|Publisher:||ELSEVIER SCIENCE SA|
|Official Date:||15 May 2000|
|Number of Pages:||4|
|Page Range:||pp. 176-179|
|Title of Event:||3rd International Conference on Molecular Beam Epitaxy-Growth Physics and Technology (MBE-GPT 99)|
|Location of Event:||WARSAW, POLAND|
|Date(s) of Event:||MAY 23-28, 1999|
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