UNSPECIFIED (2000) SiGe - heterostructures for CMOS technology. In: 3rd International Conference on Molecular Beam Epitaxy-Growth Physics and Technology (MBE-GPT 99), MAY 23-28, 1999, WARSAW, POLAND.

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Abstract

A review is given of the 300 K electron and hole mobilities in Si/SiGe heterostructures in the light of potential applications in CMOS technology. Particular emphasis is placed on p-channel structures where the gains are likely to be highest. Prospects for further enhancements in hole mobility and the growth procedures and layer configurations needed to achieve this are discussed. Recent work on heterointerface quality, limited area growth of strain-tuning virtual substrates and carrier mobility is also reported. (C) 2000 Elsevier Science S.A. All rights reserved.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	THIN SOLID FILMS
Publisher:	ELSEVIER SCIENCE SA
ISSN:	0040-6090
Date:	15 May 2000
Volume:	367
Number:	1-2
Number of Pages:	10
Page Range:	pp. 250-259
Publication Status:	Published
Title of Event:	3rd International Conference on Molecular Beam Epitaxy-Growth Physics and Technology (MBE-GPT 99)
Location of Event:	WARSAW, POLAND
Date(s) of Event:	MAY 23-28, 1999
URI:	http://wrap.warwick.ac.uk/id/eprint/13311

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