The Library

Two dimensional phonon-drag thermopower in Si0.87Ge0.13/Si (001) heterostructure grown by MBE

Tools

UNSPECIFIED (2000) Two dimensional phonon-drag thermopower in Si0.87Ge0.13/Si (001) heterostructure grown by MBE. In: 3rd International Conference on Low Dimensional Structures and Devices (LDSD 99), ANTALYA, TURKEY, SEP 15-17, 1999. Published in: MICROELECTRONIC ENGINEERING, 51-2 pp. 527-534.

Full text not available from this repository.

Abstract

Results of thermoelectric power measurements are presented for two dimensional hole gas (2DHG) formed at the normal interface of modulation boron doped Si/Si0.87Ge0.13 /(001) Si fully strained heterostructure for the first time in the temperature range 1.5 to 25 K. The modulation-doped 2DHG sample has carrier sheet density p(s) of 2 x 10(11) cm(-2) and its mobility value mu is 1.11 x 10(4) cm(2) V-1 s(-1) at liquid He-4 temperature. The thermoelectric power is found to be dominated by the phonon drag contribution. A fit to phonon-drag thermopower theory yields a value of 5.5 eV for the screened acoustic phonon deformation potential. A Kohn anomaly is observed at similar to 3.5+/-0.5 K. (C) 2000 Elsevier Science B.V. All rights reserved.

Item Type: Conference Item (UNSPECIFIED)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology
Q Science > QC Physics
Journal or Publication Title: MICROELECTRONIC ENGINEERING
Publisher: ELSEVIER SCIENCE BV
ISSN: 0167-9317
Date: May 2000
Volume: 51-2
Number of Pages: 8
Page Range: pp. 527-534
Publication Status: Published
Title of Event: 3rd International Conference on Low Dimensional Structures and Devices (LDSD 99)
Location of Event: ANTALYA, TURKEY
Date(s) of Event: SEP 15-17, 1999
URI: http://wrap.warwick.ac.uk/id/eprint/13318

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item View Item