UNSPECIFIED (2000) Two dimensional phonon-drag thermopower in Si0.87Ge0.13/Si (001) heterostructure grown by MBE. In: 3rd International Conference on Low Dimensional Structures and Devices (LDSD 99), ANTALYA, TURKEY, SEP 15-17, 1999. Published in: MICROELECTRONIC ENGINEERING, 51-2 pp. 527-534. ISSN 0167-9317.

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Abstract

Results of thermoelectric power measurements are presented for two dimensional hole gas (2DHG) formed at the normal interface of modulation boron doped Si/Si0.87Ge0.13 /(001) Si fully strained heterostructure for the first time in the temperature range 1.5 to 25 K. The modulation-doped 2DHG sample has carrier sheet density p(s) of 2 x 10(11) cm(-2) and its mobility value mu is 1.11 x 10(4) cm(2) V-1 s(-1) at liquid He-4 temperature. The thermoelectric power is found to be dominated by the phonon drag contribution. A fit to phonon-drag thermopower theory yields a value of 5.5 eV for the screened acoustic phonon deformation potential. A Kohn anomaly is observed at similar to 3.5+/-0.5 K. (C) 2000 Elsevier Science B.V. All rights reserved.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology Q Science > QC Physics
Journal or Publication Title:	MICROELECTRONIC ENGINEERING
Publisher:	ELSEVIER SCIENCE BV
ISSN:	0167-9317
Official Date:	May 2000
Dates:	Date Event May 2000 UNSPECIFIED
Volume:	51-2
Number of Pages:	8
Page Range:	pp. 527-534
Publication Status:	Published
Title of Event:	3rd International Conference on Low Dimensional Structures and Devices (LDSD 99)
Location of Event:	ANTALYA, TURKEY
Date(s) of Event:	SEP 15-17, 1999

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