UNSPECIFIED (2000) Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor. In: 3rd International Conference on Low Dimensional Structures and Devices (LDSD 99), ANTALYA, TURKEY, SEP 15-17, 1999. Published in: MICROELECTRONIC ENGINEERING, 51-2 pp. 541-546. ISSN 0167-9317.

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Abstract

In this work we report on the enhanced mobility and high electric field characteristics of SiGe p-channel MOSFETs. In the low electric field regime, the devices exhibit effective mobility three times greater than comparable standard Si devices. To determine accurate hole transport characteristics, an analytical modelling of these devices is implemented that takes into account the source drain resistance and short channel effects. (C) 2000 Elsevier Science B.V. All rights reserved.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology Q Science > QC Physics
Journal or Publication Title:	MICROELECTRONIC ENGINEERING
Publisher:	ELSEVIER SCIENCE BV
ISSN:	0167-9317
Official Date:	May 2000
Dates:	Date Event May 2000 UNSPECIFIED
Volume:	51-2
Number of Pages:	6
Page Range:	pp. 541-546
Publication Status:	Published
Title of Event:	3rd International Conference on Low Dimensional Structures and Devices (LDSD 99)
Location of Event:	ANTALYA, TURKEY
Date(s) of Event:	SEP 15-17, 1999

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