Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor
UNSPECIFIED (2000) Study of velocity field characteristics in pseudomorphic Si0.8Ge0.2 p-channel metal-oxide-semiconductor field effect transistor. In: 3rd International Conference on Low Dimensional Structures and Devices (LDSD 99), ANTALYA, TURKEY, SEP 15-17, 1999. Published in: MICROELECTRONIC ENGINEERING, 51-2 pp. 541-546.Full text not available from this repository.
In this work we report on the enhanced mobility and high electric field characteristics of SiGe p-channel MOSFETs. In the low electric field regime, the devices exhibit effective mobility three times greater than comparable standard Si devices. To determine accurate hole transport characteristics, an analytical modelling of these devices is implemented that takes into account the source drain resistance and short channel effects. (C) 2000 Elsevier Science B.V. All rights reserved.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||MICROELECTRONIC ENGINEERING|
|Publisher:||ELSEVIER SCIENCE BV|
|Official Date:||May 2000|
|Number of Pages:||6|
|Page Range:||pp. 541-546|
|Title of Event:||3rd International Conference on Low Dimensional Structures and Devices (LDSD 99)|
|Location of Event:||ANTALYA, TURKEY|
|Date(s) of Event:||SEP 15-17, 1999|
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