The Library
A study of capping layers for sulfur monolayer doping on III-V junctions
Tools
Yum, J. H., Shin, H. S., Hill, R., Oh, J., Lee, H. D., Mushinski, Ryan , Hudnall, Todd W., Bielawski, C. W., Banerjee, S. K., Loh, W. Y., Wang, Wei-E. and Kirsch, Paul (2012) A study of capping layers for sulfur monolayer doping on III-V junctions. Applied Physics Letters, 101 (25). 253514. doi:10.1063/1.4772641 ISSN 0003-6951.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1063/1.4772641
Abstract
Recently, high dosage doping on Si multi-gate field effect transistors and III–V planar structures using a self-limiting monolayer doping technique was reported to overcome challenges in scaling nano-sized transistors. The stoichiometry or composition of the capping layer was found to affect the diffusion efficiency of this process. In this work, we study the effect of a capping layer in sulfur monolayer doping on III–V junctions. Various capping temperatures and growth methods were compared. Based on the theoretical and experimental results, we suggest an optimized scheme consisting of a bi-layer capping structure. From Hall measurements and secondary ion mass spectrometry, a SiNx/BeO bi-layer capping, compared to single layer cap, exhibited the best results with a surface sheet resistance of 232 Ω/sq, junction depth of 11 nm, dopant profile abruptness of 3.5 nm/dec, electrically active S concentration of 4.9 × 1019/cm3 (=1.34 × 1013/cm2), and 3 times higher activation efficiency without significant transient-enhanced dopant diffusion.
Item Type: | Journal Article | ||||
---|---|---|---|---|---|
Divisions: | Faculty of Science, Engineering and Medicine > Science > Life Sciences (2010- ) | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 17 December 2012 | ||||
Dates: |
|
||||
Volume: | 101 | ||||
Number: | 25 | ||||
Article Number: | 253514 | ||||
DOI: | 10.1063/1.4772641 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Copyright Holders: | © 2012 American Institute of Physics |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |