Pointon, Alex I., Grant, Nicholas E., Pain, Sophie, White, Joshua T. and Murphy, John D. (2020) Data for Sub-2 cm/s passivation of silicon surfaces by aprotic solutions. [Dataset]

	Microsoft Excel (Data underpinning figures in article) 2020-03-16 Dataset for WRAP.xlsx - Published Version Available under License Creative Commons Attribution 4.0. Download (66Kb)
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Abstract

Minimizing recombination at semiconductor surfaces is required for the accurate determination of the bulk carrier lifetime. Proton donors, such as hydrofluoric acid and superacids, are well known to provide highly effective short-term surface passivation. We demonstrate here that aprotic solutions based on bis(trifluoromethanesulfonyl)methane (TFSM) in hexane or pentane can also result in excellent passivation of (100)-orientation silicon surfaces. We show that the optimized TFSM-pentane passivation scheme can measure effective lifetimes up to 20 ms, with a surface recombination velocity of 1.7 cm s^-1 at an excess carrier density of 10^15 cm^-3. Fitting injection-dependent lifetime curves requires chemical passivation and field effect passivation from a negatively charged layer with a charge density of 10^10 –10^11 q cm^-2. The slightly higher recombination velocity of 2.3 cm s^-1 measured with TFSM-hexane can be explained by a lower charge density in the passivating layer, suggesting that the steric hindrance associated with the solvent size could play a role in the passivation mechanism. Finally, phosphorus nuclear magnetic resonance experiments confirm that TFSM-based solutions have Lewis acidity without being superacids, which opens up opportunities for them to be used in materials systems sensitive to superacidic environments.

Item Type:	Dataset
Subjects:	Q Science > QC Physics Q Science > QD Chemistry
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
Type of Data:	Experimental data
Library of Congress Subject Headings (LCSH):	Silicon -- Surfaces, Surface chemistry, Semiconductors -- Surfaces, Surfaces (Physics)
Publisher:	University of Warwick, School of Engineering
Official Date:	16 March 2020
Dates:	Date Event 16 March 2020 Published 10 March 2020 Accepted
Status:	Not Peer Reviewed
Publication Status:	Published
Media of Output (format):	.xlsx
Access rights to Published version:	Open Access (Creative Commons)
Copyright Holders:	University of Warwick
Description:	The dataset (a single file in XLSX format) contains the data behind the figures in the paper. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper.
Date of first compliant deposit:	16 March 2020
Date of first compliant Open Access:	16 March 2020
RIOXX Funder/Project Grant:	Project/Grant ID RIOXX Funder Name Funder ID EP/M024911/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266 EP/R511808/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266 EP/J01768X/2 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266 EP/N509796/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266 EP/R513374/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266 EP/L015307/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266
Related URLs:	Other Related item in WRAP
Contributors:	Contribution Name Contributor ID Depositor Murphy, John D. 55925

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