Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure
UNSPECIFIED. (2000) Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure. APPLIED PHYSICS LETTERS, 76 (18). pp. 2568-2570. ISSN 0003-6951Full text not available from this repository.
The 4 K Hall mobility has been measured in a top-gated, inverted, modulation-doped Si/Si0.8Ge0.2 structure having a Si:B doping layer beneath the alloy. From comparisons with theoretical calculations, we argue that, unlike an ordinary enhancement-mode SiGe p-channel metal-oxide-semiconductor structure, this configuration leads to a decrease of interface roughness scattering with increasing sheet carrier density. We also speculate on the nature of the interface charge observed in these structures at low temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)01518-7].
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Official Date:||1 May 2000|
|Number of Pages:||3|
|Page Range:||pp. 2568-2570|
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