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SiGe CMOS fabrication using SiGe MBE and anodic/LTO gate oxide (vol 15, pg 135, 2000)
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UNSPECIFIED (2000) SiGe CMOS fabrication using SiGe MBE and anodic/LTO gate oxide (vol 15, pg 135, 2000). [Journal Item]
Full text not available from this repository.| Item Type: | Journal Item |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
| Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
| Publisher: | IOP PUBLISHING LTD |
| ISSN: | 0268-1242 |
| Date: | April 2000 |
| Volume: | 15 |
| Number: | 4 |
| Number of Pages: | 1 |
| Page Range: | p. 423 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/13449 |
Data sourced from Thomson Reuters' Web of Knowledge
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