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The thermopower of a high-mobility Si-MOSFET around the metal-insulator transition
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UNSPECIFIED (2000) The thermopower of a high-mobility Si-MOSFET around the metal-insulator transition. PHYSICA E, 6 (1-4). pp. 272-275. ISSN 1386-9477.
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Abstract
The thermopower of a high-mobility Si-MOSFET sample has been measured as a function of electron density around the metal-insulator transition over the temperature range of about 0.5-4 K. Both diffusion and phonon drag effects are clearly seen, the latter for the first time ill an insulator. Each contribution appears to vary smoothly through the MIT without reflecting the strong variation observed in the conductivity. (C) 2000 Elsevier Science B.V. All lights reserved.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology Q Science > QC Physics |
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| Journal or Publication Title: | PHYSICA E | ||||
| Publisher: | ELSEVIER SCIENCE BV | ||||
| ISSN: | 1386-9477 | ||||
| Official Date: | February 2000 | ||||
| Dates: |
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| Volume: | 6 | ||||
| Number: | 1-4 | ||||
| Number of Pages: | 4 | ||||
| Page Range: | pp. 272-275 | ||||
| Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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