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Universality at a quantum Hall - Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system
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UNSPECIFIED (2000) Universality at a quantum Hall - Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system. PHYSICA E, 6 (1-4). pp. 297-300. ISSN 1386-9477
Full text not available from this repository.Abstract
The temperature dependence of the magnetoresistivity of a Si/Si0.87Ge0.13 2D hole system with n = 2.2 x 10(11) cm(-2) and mu = 16 900 cm(2)/Vs (at 50 mK) has been studied. An insulating phase is observed for nu < 1, with p(xy) remaining finite and close to h/e(2), indicating a possible quantised Hall insulator state. The data on either side of the nu = 1 to Hall insulator transition can be scaled to a single pair of curves with a scaling exponent of kappa = 0.68 +/- 0.05. Temperature-independent conductivities close to nu = 0.69 and nu = 1.5 are found to appear at values of a, = 0.5e(2)/h (sigma(xy) = 0.5e(2)/h) and sigma(xx) = 0.5e(2)/h (sigma(xy) = 1.5e(2)/h), respectively, in agreement with theory. (C) 2000 Elsevier Science B.V. All rights reserved.
| Item Type: | Journal Article |
|---|---|
| Subjects: | T Technology Q Science > QC Physics |
| Journal or Publication Title: | PHYSICA E |
| Publisher: | ELSEVIER SCIENCE BV |
| ISSN: | 1386-9477 |
| Date: | February 2000 |
| Volume: | 6 |
| Number: | 1-4 |
| Number of Pages: | 4 |
| Page Range: | pp. 297-300 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/13589 |
Data sourced from Thomson Reuters' Web of Knowledge
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