Universality at a quantum Hall - Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system
UNSPECIFIED (2000) Universality at a quantum Hall - Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system. PHYSICA E, 6 (1-4). pp. 297-300. ISSN 1386-9477Full text not available from this repository.
The temperature dependence of the magnetoresistivity of a Si/Si0.87Ge0.13 2D hole system with n = 2.2 x 10(11) cm(-2) and mu = 16 900 cm(2)/Vs (at 50 mK) has been studied. An insulating phase is observed for nu < 1, with p(xy) remaining finite and close to h/e(2), indicating a possible quantised Hall insulator state. The data on either side of the nu = 1 to Hall insulator transition can be scaled to a single pair of curves with a scaling exponent of kappa = 0.68 +/- 0.05. Temperature-independent conductivities close to nu = 0.69 and nu = 1.5 are found to appear at values of a, = 0.5e(2)/h (sigma(xy) = 0.5e(2)/h) and sigma(xx) = 0.5e(2)/h (sigma(xy) = 1.5e(2)/h), respectively, in agreement with theory. (C) 2000 Elsevier Science B.V. All rights reserved.
|Item Type:||Journal Article|
Q Science > QC Physics
|Journal or Publication Title:||PHYSICA E|
|Publisher:||ELSEVIER SCIENCE BV|
|Number of Pages:||4|
|Page Range:||pp. 297-300|
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