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Humidity-tolerant ultrathin NiO gas-sensing films
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Wilson, Rachel L., Simion, Cristian Eugen, Stanoiu, Adelina, Taylor, Alaric, Guldin, Stefan, Covington, James A., Carmalt, Claire J. and Blackman, Chris S. (2020) Humidity-tolerant ultrathin NiO gas-sensing films. ACS Sensors, 5 (5). pp. 1389-1397. doi:10.1021/acssensors.0c00172 ISSN 2379-3694.
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WRAP-humidity-tolerant-ultra-thin-NiO-gas-sensing-films-Covington-2020.pdf - Accepted Version - Requires a PDF viewer. Download (921Kb) | Preview |
Official URL: http://dx.doi.org/10.1021/acssensors.0c00172
Abstract
When the gas sensor active layer film thickness is decreased, increased sensitivity to changes in the adsorbate concentration is expected when measuring the resistance of the layer, in particular when this thickness is on the order of the Debye length of the material (one–tens of nanometers); however, this is demonstrated only for a limited number of materials. Herein, ultrathin NiO films of different thicknesses (8–21 nm) have been deposited via chemical vapor deposition to fabricate gas sensor devices. Sensor performance for a range of NO2 concentrations (800 part-per-billion to 7 part-per-million) was evaluated and an optimum operating temperature of 125 °C determined. The dependence of the potential relative changes with respect to the NO2 concentration and of the sensor signal with respect to the geometrical parameters was qualitatively evaluated to derive a transduction model capable of fitting the experimental results. The selective sensitivity toward NO2 was confirmed by the limited response for different reducing gases, CO, CH4, NH3, and SO2, under optimum operating conditions, and the sensor signal toward NO2 increased with decreasing thickness, demonstrating that the concept of a Debye length dependence of sensitivity is applicable for the p-type semiconductor NiO. In addition, these NiO sensors were exposed to different relative levels of humidity over a wide range of operating temperatures and were found to display humidity tolerance far superior to those in previous reports on SnO2 materials.
| Item Type: | Journal Article | |||||||||
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| Subjects: | Q Science > QD Chemistry | |||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | |||||||||
| Library of Congress Subject Headings (LCSH): | Nickel oxide , Semiconductors, Gas detectors, Metal oxide semiconductors, Nanotechnology | |||||||||
| Journal or Publication Title: | ACS Sensors | |||||||||
| Publisher: | American Chemical Society | |||||||||
| ISSN: | 2379-3694 | |||||||||
| Official Date: | 22 May 2020 | |||||||||
| Dates: |
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| Volume: | 5 | |||||||||
| Number: | 5 | |||||||||
| Page Range: | pp. 1389-1397 | |||||||||
| DOI: | 10.1021/acssensors.0c00172 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Reuse Statement (publisher, data, author rights): | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Sensors, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acssensors.0c00172 | |||||||||
| Access rights to Published version: | Restricted or Subscription Access | |||||||||
| Copyright Holders: | Copyright © 2020 American Chemical Society | |||||||||
| Date of first compliant deposit: | 13 May 2020 | |||||||||
| Date of first compliant Open Access: | 22 April 2021 | |||||||||
| RIOXX Funder/Project Grant: |
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