Use of two beam energies in secondary ion mass spectrometry analysis of shallow implants: Resolution-matched profiling
UNSPECIFIED (2000) Use of two beam energies in secondary ion mass spectrometry analysis of shallow implants: Resolution-matched profiling. In: 5th International Workshop on Measurement, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (USJ 99), RES TRIANGLE PK, NORTH CAROLINA, MAR 28-31, 1999. Published in: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 18 (1). pp. 493-495.Full text not available from this repository.
The use of ultra-low-energy probes for the characterization of shallow implants using secondary ion mass spectrometry is now widely employed. However, as the energy is reduced, both the sputter and ion yields fall, leading to long analysis times and decreased sensitivity. This effect is most apparent when analyzing diffused low-energy implants where both dosimetry and junction depth are to be determined. To obtain accurate dosimetry of a distribution with a very narrow but high surface concentration, probes of 100-200 eV must be used (O-2(+) for analysis of B in Si). However, over most of the depth of the analysis, extreme depth resolution is not required. This work demonstrates the use of matching the ion energy to the task in hand, and investigates the quantification issues of changing energy within a single depth profile. (C) 2000 American Vacuum Society. [S0734-211X(00)04101-9].
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B|
|Publisher:||AMER INST PHYSICS|
|Number of Pages:||3|
|Page Range:||pp. 493-495|
|Title of Event:||5th International Workshop on Measurement, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (USJ 99)|
|Location of Event:||RES TRIANGLE PK, NORTH CAROLINA|
|Date(s) of Event:||MAR 28-31, 1999|
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