Top-gating of p-Si/SiGe/Si inverted modulation-doped structures
UNSPECIFIED. (2000) Top-gating of p-Si/SiGe/Si inverted modulation-doped structures. APPLIED PHYSICS LETTERS, 76 (3). pp. 348-350. ISSN 0003-6951Full text not available from this repository.
Low-temperature electrical properties of two-dimensional hole gases (2-DHGs) in Si/Si0.8Ge0.2/Si inverted modulation-doped structures have been investigated at different hole densities using a metal semiconductor gate sputtered on top of these structures. The 2-DHG which is supplied to the inverted interface of Si/SiGe/Si quantum well by a Si boron-doped layer spatially grown beneath the alloy, was controlled in the range of 1.5-7.8 x 10(11) cm(-2) hole density by biasing the top gate. With increasing 2-DHG sheet density, the hole wave function of these structures expands and moves away from inverted interface, consequently the mobility enhances. These results may be understood theoretically by elaborating the role of interface charge, roughness, and alloy scattering mechanisms in limiting the mobility of holes at the inverted interface. (C) 2000 American Institute of Physics. [S0003-6951(00)03802-X].
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Official Date:||17 January 2000|
|Number of Pages:||3|
|Page Range:||pp. 348-350|
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