UNSPECIFIED (1998) Is ultra shallow analysis possible using SIMS? In: International Conference on Characterization and Metrology for ULSI Technology, MAR, 1998, GAITHERSBURG, MD.

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Abstract

The use of secondary ion mass spectrometry (SIMS) to analyse ultra shallow dopant profiles is now becoming routine. However, interpretation of the data is not straight forward and the conventional method of effectively multiplying intensity and ion dose (time) axes by calibration constants to "quantify" the data is certain to produce serious inaccuracies. We demonstrate that for oxygen primary beams, analysis of silicon at normal incidence without oxygen flooding is currently the only analytical condition which leads to quantifiable, accurate profiles, and show that depth resolution better than I nm can be obtained from within 0.5 nm of the surface using sub-keV primary beams.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QC Physics
Series Name:	AIP CONFERENCE PROCEEDINGS
Journal or Publication Title:	CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY
Publisher:	AMER INST PHYSICS
ISBN:	1-56396-867-3
ISSN:	0094-243X
Editor:	Seiler, DG and Diebold, AC and Bullis, WM and Shaffner, TJ and McDonald, R and Walters, EJ
Date:	1998
Volume:	449
Number of Pages:	5
Page Range:	pp. 771-775
Publication Status:	Published
Title of Event:	International Conference on Characterization and Metrology for ULSI Technology
Location of Event:	GAITHERSBURG, MD
Date(s) of Event:	MAR, 1998
URI:	http://wrap.warwick.ac.uk/id/eprint/13856

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